Abstract: A MEMS device includes a substrate having a cavity and a membrane structure mechanically connected to the substrate and configured for deflecting out-of-plane with regard to a substrate plane and with a frequency in an ultrasonic frequency range to cause a fluid motion of the fluid in the cavity. The MEMS device includes a valve structure sandwiching the cavity together with the membrane structure, wherein the valve structure includes a planar perforated structure and a shutter structure opposing the perforated structure and arranged movably in-plane and with a frequency in the ultrasonic frequency range and with regard to the substrate plane and between a first position and a second position. The shutter structure is arranged to provide a first fluidic resistance for the fluid in the first position and a second, higher fluidic resistance for the fluid in the second position.

Abstract: A MEMS package comprises a first speaker arrangement configured for emitting sound in a first audio frequency range and a second speaker arrangement configured for emitting sound in a different second audio frequency range.

Abstract: A pressure sensing device includes a deflectable membrane structure to provide a deflection dependent output signal based on a pressure load, and a mechanical abutment structure for adjusting a spring constant of the deflectable membrane structure depending on the deflection of the deflectable membrane structure, wherein the mechanical abutment structure provides an abutting condition of the deflectable membrane structure when the deflection of the deflectable membrane structure exceeds a deflection threshold, wherein the abutting condition results in a change from a first spring constant to an increased, second spring constant of the deflectable membrane structure.

Abstract: In accordance with an embodiment, a method for producing a moisture sensor includes providing a substrate arrangement, applying a sensor structure, applying a first cover layer on the sensor structure, locally removing the planar cover layer arrangement to expose portions of an insulation layer, applying a third cover layer on the exposed portions of the insulation layer, exposing the planar cover layer arrangement covering the sensor structure, and applying a moisture-absorbing layer element on the planar cover layer arrangement covering the sensor structure to obtain the moisture sensor.

Abstract: A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.

Abstract: A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

Abstract: In accordance with an embodiment, a method for producing a moisture sensor includes providing a substrate arrangement, applying a sensor structure, applying a first cover layer on the sensor structure, locally removing the planar cover layer arrangement to expose portions of an insulation layer, applying a third cover layer on the exposed portions of the insulation layer, exposing the planar cover layer arrangement covering the sensor structure, and applying a moisture-absorbing layer element on the planar cover layer arrangement covering the sensor structure to obtain the moisture sensor.

Abstract: A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

Abstract: A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.

Abstract: A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.

Abstract: A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.

Abstract: A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.

Abstract: A device comprises a substrate, a spring structure, and a first sensor. The first sensor is resiliently coupled with the substrate via the spring structure. The spring structure is configured to provide damping of the first sensor with respect to the substrate. The device also comprises a second sensor configured to sense a deflection of the spring structure.