Patents by Inventor Marco Marchesi
Marco Marchesi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220288713Abstract: Welding machine (1) comprising a resting plane (P) configured to support respectively a tail portion and a head portion of two metal sheets to be joined. The metal sheets are slidable along an advancement direction (A). The welding machine (1) also comprises sheet-metal pressing means (2) configured to lock in a set position the head and tail portions on the resting plane (P) and a plurality of welding torches (3) configured to join respective edges of the tail and head portions. The welding torches (3) are slidably movable along a transverse direction (B) to the advancement direction (A). The welding machine (1) is characterized in that it also comprises a plurality of grounding contacts (4) that is each electrically associated with a respective welding torch (3) and movable solidly constrained to the respective welding torch (3) along the transverse direction (B).Type: ApplicationFiled: March 2, 2022Publication date: September 15, 2022Inventor: MARCO MARCHESI
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Publication number: 20210143286Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.Type: ApplicationFiled: January 20, 2021Publication date: May 13, 2021Applicant: STMicroelectronics S.r.l.Inventors: Flavio Francesco VILLA, Marco MORELLI, Marco MARCHESI, Simone Dario MARIANI, Fabrizio Fausto Renzo TOIA
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Patent number: 10930799Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.Type: GrantFiled: January 14, 2019Date of Patent: February 23, 2021Assignee: STMicroelectronics S.r.l.Inventors: Flavio Francesco Villa, Marco Morelli, Marco Marchesi, Simone Dario Mariani, Fabrizio Fausto Renzo Toia
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Patent number: 10571531Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.Type: GrantFiled: March 12, 2018Date of Patent: February 25, 2020Assignee: STMICROELECTRONICS S.R.L.Inventors: Marco Crescentini, Marco Tartagni, Aldo Romani, Roberto Canegallo, Marco Marchesi, Domenico Cristaudo
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Patent number: 10535767Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.Type: GrantFiled: January 31, 2019Date of Patent: January 14, 2020Assignee: STMICROELECTRONICS S.R.L.Inventors: Marco Sambi, Fabrizio Fausto Renzo Toia, Marco Marchesi, Marco Morelli, Riccardo Depetro, Giuseppe Barillaro, Lucanos Marsilio Strambini
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Publication number: 20190221678Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.Type: ApplicationFiled: January 14, 2019Publication date: July 18, 2019Applicant: STMicroelectronics S.r.l.Inventors: Flavio Francesco VILLA, Marco MORELLI, Marco MARCHESI, Simone Dario MARIANI, Fabrizio Fausto Renzo TOIA
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Publication number: 20190165170Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.Type: ApplicationFiled: January 31, 2019Publication date: May 30, 2019Inventors: Marco SAMBI, Fabrizio Fausto Renzo TOIA, Marco MARCHESI, Marco MORELLI, Riccardo DEPETRO, Giuseppe BARILLARO, Lucanos Marsilio STRAMBINI
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Patent number: 10236378Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.Type: GrantFiled: March 13, 2017Date of Patent: March 19, 2019Assignee: STMICROELECTRONICS S.R.L.Inventors: Marco Sambi, Fabrizio Fausto Renzo Toia, Marco Marchesi, Marco Morelli, Riccardo Depetro, Giuseppe Barillaro, Lucanos Marsilio Strambini
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Patent number: 10094891Abstract: An integrated AMR magnetoresistive sensor has a magnetoresistor, a set/reset coil and a shielding region arranged on top of each other. The set/reset coil is positioned between the magnetoresistor and the shielding region. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape having a length in a first direction parallel to the preferential magnetization direction and a width in a second direction perpendicular to the first direction. The set/reset coil has at least one stretch extending transversely to the magnetoresistive strip. The shielding region is a ferromagnetic material and has a width in the second direction greater than the width of the magnetoresistive strip so as to attenuate the external magnetic field traversing the magnetoresistive strip and increase the sensitivity scale of the magnetoresistive sensor.Type: GrantFiled: April 22, 2016Date of Patent: October 9, 2018Assignee: STMicroelectronics S.r.l.Inventors: Dario Paci, Marco Marchesi, Marco Morelli
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Publication number: 20180203076Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.Type: ApplicationFiled: March 12, 2018Publication date: July 19, 2018Inventors: Marco Crescentini, Marco Tartagni, Aldo Romani, Roberto Canegallo, Marco Marchesi, Domenico Cristaudo
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Patent number: 9952291Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.Type: GrantFiled: April 29, 2016Date of Patent: April 24, 2018Assignee: STMicroelectronics S.r.l.Inventors: Marco Crescentini, Marco Tartagni, Aldo Romani, Roberto Canegallo, Marco Marchesi, Domenico Cristaudo
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Publication number: 20180097055Abstract: A dielectric structure extends over the substrate and a transformer is integrated in the dielectric structure. The transformed includes a first winding in the dielectric layer at a first height and a second winding in the dielectric layer at a second height greater than the first height. The first and second windings are magnetically coupleable to one another. A magnetic element is positioned in alignment with the first and second windings. In one implementation, the magnetic element underlies the first winding in a position between the substrate and the first winding. In another implementation, the magnetic element overlies the second winding.Type: ApplicationFiled: March 9, 2017Publication date: April 5, 2018Applicant: STMicroelectronics S.r.l.Inventors: Elisabetta Pizzi, Fabrizio Fausto Renzo Toia, Marco Marchesi, Vincenzo Palumbo
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Publication number: 20180061982Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.Type: ApplicationFiled: March 13, 2017Publication date: March 1, 2018Inventors: Marco Sambi, Fabrizio Fausto Renzo Toia, Marco Marchesi, Marco Morelli, Riccardo Depetro, Giuseppe Barillaro, Lucanos Marsilio Strambini
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Patent number: 9664753Abstract: A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell.Type: GrantFiled: March 4, 2015Date of Patent: May 30, 2017Assignee: STMicroelectronics S.r.l.Inventors: Giulio Ricotti, Marco Morelli, Marco Marchesi
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Publication number: 20170030983Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.Type: ApplicationFiled: April 29, 2016Publication date: February 2, 2017Inventors: Marco CRESCENTINI, Marco TARTAGNI, Aldo ROMANI, Roberto CANEGALLO, Marco MARCHESI, Domenico CRISTAUDO
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Publication number: 20160377691Abstract: An integrated AMR magnetoresistive sensor has a magnetoresistor, a set/reset coil and a shielding region arranged on top of each other. The set/reset coil is positioned between the magnetoresistor and the shielding region. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape having a length in a first direction parallel to the preferential magnetization direction and a width in a second direction perpendicular to the first direction. The set/reset coil has at least one stretch extending transversely to the magnetoresistive strip. The shielding region is a ferromagnetic material and has a width in the second direction greater than the width of the magnetoresistive strip so as to attenuate the external magnetic field traversing the magnetoresistive strip and increase the sensitivity scale of the magnetoresistive sensor.Type: ApplicationFiled: April 22, 2016Publication date: December 29, 2016Applicant: STMicroelectronics S.r.l.Inventors: Dario Paci, Marco Marchesi, Marco Morelli
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Publication number: 20150276894Abstract: A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell.Type: ApplicationFiled: March 4, 2015Publication date: October 1, 2015Applicant: STMicroelectronics S.r.l.Inventors: Giulio Ricotti, Marco Morelli, Marco Marchesi
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Patent number: 9074046Abstract: Disclosed is a process for the preparation of compounds of formula (I) wherein R1 is C1-C4 alkoxy; R2 is hydrogen or a group of formula —CH2—PO3H2 or is a group of formula R1-O—(CH2—CH2O)n—CH2—CH2—; R3 is an alkylene, optionally substituted with one or more —NR2-groups; R4 and R5 are both a group of formula —CH2—PO3H2 or one of them is a group of formula —CH2—PO3H2 and the other is a group of formula R1-O—(CH2—CH2—O)-CH2-CH2-; n is an integer between 4 and 50; which comprises: a) reacting a compound of formula R1-O—(CH2—CH2—O)n—CH2—CH2—OH with SOCl2 or a similar reagent to give a compound of formula R1-O—(CH2—CH2—O)n—CH2—CH2—Cl; b) reacting the compound obtained in a) with an amine of formula NH2—R3?-NH2 wherein R3? is an alkylene optionally substituted with one or more —NH-groups; c) reacting the compound obtained in b) with formaldehyde and phosphorous acid.Type: GrantFiled: April 9, 2013Date of Patent: July 7, 2015Assignee: GIOVANNI BOZZETTO S.P.A.Inventors: Massimo Paladini, Angela Rozzoni, Maurizio Bellotto, Marco Marchesi
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Publication number: 20150073175Abstract: Disclosed is a process for the preparation of compounds of formula (I) wherein R1 is C1-C4 alkoxy; R2 is hydrogen or a group of formula —CH2—PO3H2 or is a group of formula R1-O—(CH2—CH2O)n—CH2—CH2—; R3 is an alkylene, optionally substituted with one or more —NR2-groups; R4 and R5 are both a group of formula —CH2—PO3H2 or one of them is a group of formula —CH2—PO3H2 and the other is a group of formula R1-O—(CH2—CH2—O)-CH2-CH2-; n is an integer between 4 and 50; which comprises: a) reacting a compound of formula R1-O—(CH2—CH2—O)n—CH2—CH2—OH with SOCl2 or a similar reagent to give a compound of formula R1-O—(CH2—CH2—O)n—CH2—CH2—Cl; b) reacting the compound obtained in a) with an amine of formula NH2—R3?-NH2 wherein R3? is an alkylene optionally substituted with one or more —NH-groups; c) reacting the compound obtained in b) with formaldehyde and phosphorous acid.Type: ApplicationFiled: April 9, 2013Publication date: March 12, 2015Inventors: Massimo Paladini, Angela Rozzoni, Maurizio Bellotto, Marco Marchesi
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Patent number: 8466599Abstract: In an electrostatic micromotor, a mobile substrate faces a fixed substrate and is suspended over the fixed substrate at a given distance of separation in an operative resting condition; an actuation unit is configured so as to give rise to a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement during an operative condition of actuation. The actuation unit is also configured so as to bring the mobile substrate and the fixed substrate substantially into contact and to keep them in contact during the operative condition of actuation. The electrostatic micromotor is provided with an electronic unit for reducing friction, configured so as to reduce a friction generated by the contact between the rotor substrate and the stator substrate during the relative movement.Type: GrantFiled: July 31, 2009Date of Patent: June 18, 2013Assignee: STMicroelectronics S.r.l.Inventors: Ubaldo Mastromatteo, Bruno Murari, Giulio Ricotti, Marco Marchesi