Abstract: A device for closing and opening doors and/or hatches and/or similar components, in particular of household appliances such as washing machines, in particular with top loading, dishwashers and similar household appliances, said device comprising a closing and opening assembly adapted to be fixed to one of a fixed part and the hatch of a household appliance and including a closing and opening element which is adapted to be switched by translation between a first end-stop position and a second end-stop position and vice versa; wherein said device comprises a permission element which is adapted to be switched by translation between a first end-stop own position thereof and a second end-stop own position thereof and vice versa, and wherein said permission element, during the translation thereof from said first end-stop own position thereof to said second end-stop own position thereof, is adapted to be locked in a third intermediate own position thereof between said first and second end-stop own positions thereof.

Abstract: A device for closing and opening doors and/or hatches and/or similar components, in particular of household appliances such as washing machines, in particular with top loading, dishwashers and similar household appliances, said device comprising a closing and opening assembly adapted to be fixed to one of a fixed part and the hatch of a household appliance and including a closing and opening element which is adapted to be switched by translation between a first end-stop position and a second end-stop position and vice versa; wherein said device comprises a permission element which is adapted to be switched by translation between a first end-stop own position thereof and a second end-stop own position thereof and vice versa, and wherein said permission element, during the translation thereof from said first end-stop own position thereof to said second end-stop own position thereof, is adapted to be locked in a third intermediate own position thereof between said first and second end-stop own positions thereof.

Abstract: The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.

Abstract: A reaction chamber of a reactor for epitaxial growth includes a wall (1) with a recess and a susceptor (7) comprising a body and a relief. The body is placed in said recess in a rotational manner with respect to said wall (1). The chamber includes a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth. The chamber also includes a flat covering (91, 92) located over said wall (1) and a hole (10) at said discoid supporting element (8). The shape of said hole (10) corresponds to the shape of said discoid supporting element (8). The covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

Abstract: A reaction chamber of a reactor for epitaxial growth comprises:—a wall (1) with a recess,—a susceptor (7) comprising a body and a relief, wherein said body is placed in said recess in rotational manner with respect to said wall (1),—a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth, and—a flat covering (91, 92) located over said wall (1) and a having hole (10) at said discoid supporting element (8); wherein the shape of said hole (10) corresponds to the shape of said discoid supporting element (8); wherein said covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

Abstract: The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.

Abstract: The present invention relates to a process for cleaning the reaction chamber (12) of a CVD reactor, comprising the steps of heating the chamber walls to a suitable temperature and introducing a gas flow into the chamber, this cleaning process may be advantageously used within an operating process of a CVD reactor for depositing semiconductor material onto substrates inside a chamber; this operating process envisages a growth process comprising the sequential and cyclical loading of the substrates into the chamber (12), deposition of semiconductor material onto the substrates and unloading of the substrates from the chamber (12); after unloading a process for cleaning the chamber (12) is performed. The invention also relates to process for cleaning the entire CVD reactor, which envisages, together with heating, the presence of chemical etching components in the gas flow.