Abstract: A transistor arrangement is disclosed. The transistor arrangement includes a first transistor device and a second transistor device. The first transistor device and the second transistor device are connected in series and integrated in a common semiconductor body. The first transistor device is a lateral superjunction transistor device and is integrated in a first device region of the semiconductor body. The second transistor device is a lateral transistor device and is integrated in at least one second device region of the semiconductor body. The at least one second device region is spaced apart from the first device region.

Abstract: According to an embodiment of a semiconductor device, the device includes: a transistor or diode device formed in a semiconductor substrate; an insulating material at least partially covering a lateral drift zone of the transistor or diode device or a termination region; and a fill pattern disposed over the lateral drift zone or termination region, the fill pattern having a variable density that follows equipotential lines of an electric field distribution expected between the fill pattern at a surface of the lateral drift zone or termination region during operation of the semiconductor device. Corresponding methods of producing the semiconductor device are also described.

Abstract: A semiconductor device includes a layer stack with first and second semiconductor layers of complementary doping types are arranged alternatingly between first and second surfaces of the layer stack. A first semiconductor region adjoins the first semiconductor layers and has a first end arranged in a first device region and extends from the first end into a second device region. Second semiconductor regions adjoin at least one of the second semiconductor layers. A third semiconductor region adjoins the first semiconductor layers. The first semiconductor region extends from the first device region into the second device region and is spaced apart from the third semiconductor region. The second semiconductor regions are arranged between, and spaced apart from, the third and first semiconductor regions.

Abstract: A semiconductor device includes a layer stack with first semiconductor layers and second semiconductor layers of opposite doping types arranged alternatingly. A first semiconductor region of a first semiconductor device adjoins the first semiconductor layers, and has a first end arranged in a first region of the first semiconductor device and extends from the first end into a second region of the first semiconductor device. Second semiconductor regions of the first semiconductor device adjoin at least one of the second semiconductor layers. A third semiconductor region of the first semiconductor device adjoins the first semiconductor layers. The first semiconductor region extends from the first region into the second region and is spaced apart from the third semiconductor region. The second semiconductor regions are arranged between, and spaced apart from, the third and first semiconductor regions.

Abstract: A transistor arrangement is disclosed. The transistor arrangement includes a first transistor device and a second transistor device. The first transistor device and the second transistor device are connected in series and integrated in a common semiconductor body. The first transistor device is a lateral superjunction transistor device and is integrated in a first device region of the semiconductor body. The second transistor device is a lateral transistor device and is integrated in at least one second device region of the semiconductor body. The at least one second device region is spaced apart from the first device region.

Abstract: According to an embodiment of a semiconductor device, the device includes: a transistor or diode device formed in a semiconductor substrate; an insulating material at least partially covering a lateral drift zone of the transistor or diode device or a termination region; and a fill pattern disposed over the lateral drift zone or termination region, the fill pattern having a variable density that follows equipotential lines of an electric field distribution expected between the fill pattern at a surface of the lateral drift zone or termination region during operation of the semiconductor device. Corresponding methods of producing the semiconductor device are also described.

Abstract: A semiconductor device includes a layer stack with first and second semiconductor layers of complementary doping types are arranged alternatingly between first and second surfaces of the layer stack. A first semiconductor region adjoins the first semiconductor layers and has a first end arranged in a first device region and extends from the first end into a second device region. Second semiconductor regions adjoin at least one of the second semiconductor layers. A third semiconductor region adjoins the first semiconductor layers. The first semiconductor region extends from the first device region into the second device region and is spaced apart from the third semiconductor region. The second semiconductor regions are arranged between, and spaced apart from, the third and first semiconductor regions.

Abstract: A semiconductor device includes a layer stack with first semiconductor layers and second semiconductor layers of opposite doping types arranged alternatingly. A first semiconductor region of a first semiconductor device adjoins the first semiconductor layers, and has a first end arranged in a first region of the first semiconductor device and extends from the first end into a second region of the first semiconductor device. Second semiconductor regions of the first semiconductor device adjoin at least one of the second semiconductor layers. A third semiconductor region of the first semiconductor device adjoins the first semiconductor layers. The first semiconductor region extends from the first region into the second region and is spaced apart from the third semiconductor region. The second semiconductor regions are arranged between, and spaced apart from, the third and first semiconductor regions.

Abstract: An intraocular lens supply system is provided. The intraocular lens supply system includes a housing and a cartridge. The cartridge is configured to receive an intraocular lens and can be inserted into the housing. The intraocular lens supply system further includes a heating element including a latent heat accumulator and a nucleating agent, and a pressure element which is coupled to the cartridge or the housing and which can be displaced such that the pressure element exerts a pressing force onto the nucleating agent when the cartridge is inserted into the housing in such a manner that thermal energy can be supplied to the cartridge from the heating element.

Abstract: A cartridge accommodates an intraocular lens and includes first and second cartridge parts pivotally moveable relative to each other to define an open state and a closed state. The first cartridge part has a first base element and a first plate-like wing extending from the first base element. The second cartridge part has a second base element and a second plate-like wing extending from the second base element. The first and second base elements conjointly define a receiving chamber for the lens when the first and second cartridge parts are in the closed state. A lubricant feed arrangement supplies a lubricant for the lens into the receiving chamber from outside of the cartridge when the cartridge is in the closed state. The lubricant feed arrangement includes a feed channel which is formed in one of the cartridge parts and opens into the receiving chamber.

Abstract: A valve body is described for a braking system of a motor vehicle, having an insulating element inserted into a passthrough opening of the valve body, which is embodied to insulate a contact pin with respect to a surface of the passthrough opening, the insulating element being embodied integrally with the passthrough opening. A hydraulic unit is described for the braking system of the motor vehicle.

Abstract: A cartridge accommodates an intraocular lens and includes first and second cartridge parts pivotally moveable relative to each other to define an open state and a closed state. The first cartridge part has a first base element and a first plate-like wing extending from the first base element. The second cartridge part has a second base element and a second plate-like wing extending from the second base element. The first and second base elements conjointly define a receiving chamber for the lens when the first and second cartridge parts are in the closed state. A lubricant feed arrangement supplies a lubricant for the lens into the receiving chamber from outside of the cartridge when the cartridge is in the closed state. The lubricant feed arrangement includes a feed channel which is formed in one of the cartridge parts and opens into the receiving chamber.

Abstract: An intraocular lens supply system is provided. The intraocular lens supply system includes a housing and a cartridge. The cartridge is configured to receive an intraocular lens and can be inserted into the housing. The intraocular lens supply system further includes a heating element including a latent heat accumulator and a nucleating agent, and a pressure element which is coupled to the cartridge or the housing and which can be displaced such that the pressure element exerts a pressing force onto the nucleating agent when the cartridge is inserted into the housing in such a manner that thermal energy can be supplied to the cartridge from the heating element.

Abstract: The invention relates to a method for the preparation of radiochemical compounds using a device having at least a reaction module, a dosing module, and a storage module, wherein the reaction module has at least one reaction vessel having a closable opening through which substances needed for the preparation of a predetermined radiochemical compound can be introduced into the reaction vessel of the reaction module and through which the prepared radiochemical compound can be removed from the reaction vessel of the reaction module; the dosing module has at least one pipetting head which can be moved relative to the storage module and the reaction module and in x, y, and z directions and also has at least one dosing unit; and at least one reservoir for one of the substances needed for the preparation of the respective radiochemical compound is formed in the storage module.

Abstract: A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench.

Abstract: An illuminated window arrangement having insulating glazing is described. The illuminated window arrangement has: composite glass pane, at least one circumferential connection element between the composite glass pane and a lower pane, and LED housing fastened to a side edge of the lower pane, an LED printed circuit board fastened to the LED, an electrical connector fastened to the LED printed circuit board, and sheathing of the LED, the LED printed circuit board, and the electrical connector.

Abstract: The invention relates to a method for the preparation of radiochemical compounds using a device having at least a reaction module, a dosing module, and a storage module, wherein the reaction module has at least one reaction vessel having a closable opening through which substances needed for the preparation of a predetermined radiochemical compound can be introduced into the reaction vessel of the reaction module and through which the prepared radiochemical compound can be removed from the reaction vessel of the reaction module; the dosing module has at least one pipetting head which can be moved relative to the storage module and the reaction module and in x, y, and z directions and also has at least one dosing unit; and at least one reservoir for one of the substances needed for the preparation of the respective radiochemical compound is formed in the storage module.

Abstract: The invention relates to a device for the preparation of radiochemical compounds. It is provided that the device comprises at least a reaction module, a dosing module, and a storage module, wherein the reaction module has at least one reaction vessel having a closable opening through which substances needed for the preparation of a predetermined radiochemical compound can be introduced into the reaction vessel of the reaction module and through which the prepared radiochemical compound can be removed from the reaction vessel of the reaction module; the dosing module has at least one pipetting head which can be moved relative to the storage module and the reaction module and in x, y, and z directions and also has at least one dosing unit; and at least one reservoir for one of the substances needed for the preparation of the respective radiochemical compound is formed in the storage module.

Abstract: According to various embodiments, a method for processing a wafer may include: forming at least one hollow chamber and a support structure within the wafer, the at least one hollow chamber defining a cap region of the carrier located above the at least one hollow chamber and a bottom region of the carrier located below the at least one hollow chamber and an edge region surrounding the cap region of the carrier, wherein a surface area of the cap region is greater than a surface area of the edge region, and wherein the cap region is connected to the bottom region by the support structure; removing the cap region in one piece from the bottom region and the edge region.

Abstract: An insulating glazing with an electrical connection element is described. The insulating glazing having a first pane, and a second pane, a peripheral spacer between the first pane and the second pane, an inner insulation between the peripheral spacer and the first pane and between the peripheral spacer and the second pane, an outer insulation in an outer edge space between the first pane, the peripheral spacer, and the second pane, and a connected plug connection arrangement that has an inner plug connection between the first pane and the second pane, a central plug connection in the peripheral spacer, and an outer plug connection.