Abstract: Whenever substrates are rotationally and continuously conveyed in a vacuum recipient around a common axis and past a magnetron sputter source, sputtering of the target, rotating around a central target axis, by the stationary magnetron plasma is adapted to the azimuthal extents radially differently spaced areas of the substrates become exposed to the target thereby improving homogeneity of deposited layer thickness on the substrates and ensuring that the complete sputter surface of the target is net-sputtered.

Abstract: A vacuum treatment apparatus includes a vacuum treatment recipient with a circular opening between an inside and exterior of the recipient. The recipient houses a turntable, which defines a plane (P) along its table surface, is drivingly rotatable around a central axis perpendicular to plane (P), and exhibits a plurality of circular substrates supports. The opening is arranged such that during a turn of the turntable the area of each of the substrate supports and the opening are fully aligned and completely face each other. The vacuum treatment apparatus also includes a PVD deposition source attached to the opening. The PVD source has a a circular material target and a static magnet arrangement. The magnet arrangement is arranged in a plane (M) in parallel to plane (P) and is not rotationally symmetric around a central axis running centrally through the magnet arrangement and being perpendicular to the plane (M).

Abstract: A vacuum treatment apparatus includes a vacuum treatment recipient with a circular opening between an inside and exterior of the recipient. The recipient houses a turntable, which defines a plane (P) along its table surface, is drivingly rotatable around a central axis perpendicular to plane (P), and exhibits a plurality of circular substrates supports. The opening is arranged such that during a turn of the turntable the area of each of the substrate supports and the opening are fully aligned and completely face each other. The vacuum treatment apparatus also includes a PVD deposition source attached to the opening. The PVD source has a a circular material target and a static magnet arrangement. The magnet arrangement is arranged in a plane (M) in parallel to plane (P) and is not rotationally symmetric around a central axis running centrally through the magnet arrangement and being perpendicular to the plane (M).