Abstract: This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.

Abstract: This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment.

Abstract: This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.

Abstract: This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment.

Abstract: This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.

Abstract: A process for nucleating and growing oxygen precipitates in a silicon wafer, including subjecting a wafer having a non-uniform concentration of crystal lattice vacancies with the concentration of vacancies in the bulk layer being greater than the concentration of vacancies in the surface layer to a non-isothermal heat treatment to form of a denuded zone in the surface layer and to cause the formation and stabilization of oxygen precipitates having an effective radial size 0.5 nm to 30 nm in the bulk layer. The process optionally includes subjecting the stabilized wafer to a high temperature thermal process (e.g. epitaxial deposition, rapid thermal oxidation, rapid thermal nitridation and etc.) at temperatures in the range of 1000 OC to 1275 OC without causing the dissolution of the stabilized oxygen precipitates.

Abstract: The process relates to a process for nucleating and growing oxygen precipitates in a silicon wafer. The process includes subjecting a wafer having a non-uniform concentration of crystal lattice vacancies with the concentration of vacancies in the bulk layer being greater than the concentration of vacancies in the surface layer to a non-isothermal heat treatment to form of a denuded zone in the surface layer and to cause the formation and stabilization of oxygen precipitates having an effective radial size 0.5 nm to 30 nm in the bulk layer. The process optionally includes subjecting the stabilized wafer to a high temperature thermal process (e.g. epitaxial deposition, rapid thermal oxidation, rapid thermal nitridation and etc.) at temperatures in the range of 1000° C. to 1275° C. without causing the dissolution of the stabilized oxygen precipitates.