Abstract: A monolithic edge-emitting semiconductor diode array chip (100) comprises a one-dimensional array (70) of diode emitters (50), such as laser diodes, superluminescent diodes or semiconductor optical amplifiers. Semiconductor layers are arranged on a conductive substrate (1) and include active region layers (14) arranged between upper and lower cladding layers (12, 16) and separation layers (4, 5) arranged between the conductive substrate (1) and the lower cladding layer (16). The diode emitters (50) are formed by respective ridges (9) that are separated by trenches (25) which are sufficiently deep to penetrate into the separation layers (4, 5). Each diode (50) has its own upper and lower contacts (22, 24) that allow each diode (50) to be independently drivable with a current source driver circuit connected to push a modulated push current through its associated diode and/or a current sink connected to extract a modulated pull current through its associated diode.

Abstract: An edge-emitting semiconductor laser diode chip 15 with mutually opposed front and back end facet mirrors 22, 24. First and second ridges 261, 262 extend between the chip end facets 22, 24 to define first and second waveguides in an active region layer. Low and high slope efficiency laser diodes are thus formed that are independently drivable by respective electrode pairs 211, 231 and 212, 232. The single chip 15 thus incorporates two laser diodes sharing a common heterostructure, one with low slope efficiency optimized for low power operation with good power stability against temperature variations and random threshold current fluctuations in the close-to-threshold power regime, and the other with high slope efficiency optimized for high wall plug efficiency operation at higher output powers when the chip is operating far above threshold.

Abstract: A machine for preparing fluid products has a dispensing module with a tank for fluid products. The tank is connected to a pump device for dispensing measured quantities of fluid product in an operating dispensing zone of the dispensing module. The dispensing module has a transport device for transporting a container from an inlet to an outlet which are different from each other, by passing through the operating dispensing zone in which the container is selectively located. The machine further includes an inlet and an outlet which are mutually different, for introducing and removing to/from the machine a container, in which to dispense measured quantities of fluid products to obtain a finished fluid product. The inlet of the machine communicates with continuity of transport with an inlet of a dispensing module, and the outlet of the machine communicates with continuity of transport with an outlet of a dispensing module.

Abstract: An edge-emitting semiconductor laser diode chip 15 with mutually opposed front and back end facet mirrors 22, 24. First and second ridges 261, 262 extend between the chip end facets 22, 24 to define first and second waveguides in an active region layer. Low and high slope efficiency laser diodes are thus formed that are independently drivable by respective electrode pairs 211, 231 and 212, 232. The single chip 15 thus incorporates two laser diodes sharing a common heterostructure, one with low slope efficiency optimized for low power operation with good power stability against temperature variations and random threshold current fluctuations in the close-to-threshold power regime, and the other with high slope efficiency optimized for high wall plug efficiency operation at higher output powers when the chip is operating far above threshold.

Abstract: Superluminescent light emitting diode, SLED, devices and modules are provided. A multi-wavelength SLED device is fabricated by sequentially depositing adjacent epitaxial stacks onto a substrate to form a monolithic chip structure. Each epitaxial stack includes n-type layers, active layers and p-type layers. A ridge is formed in the p-type layers between the end facets of the chip to induce a waveguiding region in the active layers. Different ones of the epitaxial stacks emit at different wavelength ranges. A module is made by packaging one of the above SLED devices with another SLED device, with one inverted relative to the other to form a triangle of emitters as viewed end on, for example a triangle of red, green and blue emitters. The SLED devices and modules may find use in projection, endoscopic, fundus imaging and optical coherence tomography systems.

Abstract: A positive-displacement pump for fluid products, in particular paints, colorants and the like, includes a pump body in which there is formed a pumping chamber, in which a piston is mounted for sliding and is controlled so as to advance and withdraw in order to vary the useful volume of the pumping chamber. The pumping chamber has an upper region located at the highest location of the pumping chamber and in the region of which the pumping chamber is placed in communication with at least one intake pipe for a fluid product.

Abstract: A positive-displacement pump for fluid products, in particular paints, colorants and the like, includes a pump body in which there is formed a pumping chamber, in which a piston is mounted for sliding and is controlled so as to advance and withdraw in order to vary the useful volume of the pumping chamber. The pumping chamber extends in accordance with a longitudinal axis which is inclined, in a non-vertical manner, with respect to a horizontal plane and having an upper region which is positioned at a greater height with respect to a horizontal plane and in the region of which the pumping chamber is placed in communication with at least one intake pipe of a fluid product.

Abstract: Superluminescent light emitting diode, SLED, devices and modules are provided. A multi-wavelength SLED device is fabricated by sequentially depositing adjacent epitaxial stacks onto a substrate to form a monolithic chip structure. Each epitaxial stack includes n-type layers, active layers and p-type layers. A ridge is formed in the p-type layers between the end facets of the chip to induce a waveguiding region in the active layers. Different ones of the epitaxial stacks emit at different wavelength ranges. A module is made by packaging one of the above SLED devices with another SLED device, with one inverted relative to the other to form a triangle of emitters as viewed end on, for example a triangle of red, green and blue emitters. The SLED devices and modules may find use in projection, endoscopic, fundus imaging and optical coherence tomography systems.

Abstract: A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.

Abstract: A kit of products for extemporaneously preparing covering fluid products, such as varnishes, paints, enamels and other similar decorative products, including a non-pigmented main semi-processed product with one or more binder substances and one or more filler substances which are dispersed in a fluid diluent. The kit also includes at least one pigmented subordinate semi-processed product which contains at least one particulate of titanium dioxide which is dispersed in the fluid diluent. The kit also includes at least one non-pigmented subordinate semi-processed product which contains at least one or more filler substance(s) and one or more binder substance(s) which are dispersed in the fluid diluent.

Abstract: A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.

Abstract: A low power, side-emitting semiconductor laser diode is provided. The laser diode is formed from a semiconductor heterostructure having an active layer sandwiched between an n-type layer and a p-type layer, wherein the active layer forms a gain medium of width W. Front and back reflectors of reflectivity Rf and Rb are arranged on opposing side facets of the semiconductor heterostructure part to form a cavity of length L containing at least a part of the active layer which thus forms the gain medium for the laser diode, the gain medium having an internal loss ?i. To achieve stable, low power operation close to threshold, the laser diode is configured with the following parameter combination: width W: 1 ?m?W?2 ?m; cavity length L: 100 ?m?L?600 ?m; internal loss ?i: 0 cm?1??i?30 cm?1; back reflectivity Rb: 100?Rb?80%; and front reflectivity Rf: 100?Rf?60%.

Abstract: A dispensing machine for producing paint samples including a main delivery unit for delivering at least two main paints via at least two main pumps, and a colourant delivery unit for delivering a plurality of colourants via a corresponding plurality of colourant pumps. The main pumps are volumetric pumps each having a first swept volume. The colourant pumps are volumetric pumps each having a second swept volume, less than the first swept volume. The machine additionally includes at least one magazine for empty containers. The machine can include at least one magazine for container cover elements. A handling system conveys a container from the container magazine to a common delivery zone and from there to a capping station.

Abstract: A mixer for fluid products, including a base, a support structure mounted on the base and rotatable about a first axis of rotation, and a housing structure having a housing for a container of fluid products. The housing structure is mounted on the support structure at a radial distance from the first axis, and can be rotated about a second axis of rotation which is at a radial distance from the first axis. A motor is mounted on the base for transmitting a rotational movement to the support structure about the first axis a first transmission. A second transmission transmits the rotational movement to the housing structure about the second axis. The housing for a fluid product container is at a radial distance from the second axis so as to impart, during use, a combined epicyclic movement to at least one container accommodated on the housing structure.

Abstract: A low power, side-emitting semiconductor laser diode is provided. The laser diode is formed from a semiconductor heterostructure having an active layer sandwiched between an n-type layer and a p-type layer, wherein the active layer forms a gain medium of width W. Front and back reflectors of reflectivity Rf and Rb are arranged on opposing side facets of the semiconductor heterostructure part to form a cavity of length L containing at least a part of the active layer which thus forms the gain medium for the laser diode, the gain medium having an internal loss ?i. To achieve stable, low power operation close to threshold, the laser diode is configured with the following parameter combination: width W: 1 ?m?W?2 ?m; cavity length L: 100 ?m?L?600 ?m; internal loss ?i: 0 cm?1?i?30 cm?1; back reflectivity Rb: 100?Rb?80%; and front reflectivity Rf: 100?Rf?60%.

Abstract: A positive-displacement pump for fluid products, in particular paints, colorants and the like, includes a pump body in which there is formed a pumping chamber, in which a piston is mounted for sliding and is controlled so as to advance and withdraw in order to vary the useful volume of the pumping chamber. The pumping chamber extends in accordance with a longitudinal axis which is inclined, in a non-vertical manner, with respect to a horizontal plane and having an upper region which is positioned at a greater height with respect to a horizontal plane and in the region of which the pumping chamber is placed in communication with at least one intake pipe of a fluid product.

Abstract: In a method for producing paints by means of mixing fluid products, there is provided a group of fluid products comprising at least one white paint, containing a predetermined percentage quantity of titanium dioxide, and at least one neutral paint which does not have colorants. There is then provided an empty container which is filled with a predetermined quantity of paint which is obtained by mixing the white paint and the neutral paint at variable proportions between 0% and 100%. There is obtained a resultant paint which has a content of titanium dioxide which is selected between a maximum, corresponding to the content of titanium of the white paint, and 0%, corresponding to the content of titanium of the neutral paint.

Abstract: A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.

Abstract: The invention regards a non-return valve for a exhaust duct of flue gases of a boiler, comprising a valve body in which a passage opening of flue gases is defined, to said valve body a obturator being associated which, in a determined operating condition, closes said opening, said obturator comprising a first swing element, hinged on said valve body at said passage opening of flue gases. Advantageously, said obturator comprises a second swing element, hinged on said valve body at said passage opening of flue gases, said first and second swing elements being hinged at or in proximity to a middle plane of said opening.