Abstract: A member is provided which includes a silicon base substrate layer, a transition layer arranged over the silicon base substrate layer, and a gallium nitride (GaN) buffer layer arranged over the transition layer. The member further includes a gallium oxide layer. The member is beneficial for co-integration of ultra-wide-bandgap technology with wide bandgap technology, such as by using the gallium oxide layer with the gallium nitride buffer layer on cheap silicon substrates, such as the silicon base substrate layer. Therefore, the member provides access to establish the gallium nitride buffer layer (or gallium nitride) on the silicon base substrate layer (or silicon production lines) with improved thermal conductivity and higher electrical performance.

Abstract: Systems are provided for increasing an efficiency of an electric drive axle, and reducing a number of components and weight of the axle. In one example, an electric drive assembly comprises an electric motor having a rotor shaft supported by a first rotor shaft bearing and a second rotor shaft bearing; a gearbox having a layshaft layout, where at least one input gear of the gearbox is mounted on the rotor shaft; and a multi-piece housing, the multi-piece housing including a first housing section supporting the first rotor shaft bearing and a stator of the electric motor; the first housing section defining an inner boundary of a motor cooling jacket; and a second housing section partially overlapping with the first housing section, the second housing section partially enclosing the gearbox and partially enclosing the electric motor; the second housing section defining an outer boundary of the motor cooling jacket.

Abstract: Methods and systems are provided for a vehicle park lock. In one example, the park lock may be configured with a first portion having a first set of teeth and a second portion having a second set of teeth configured to engage with the first set of teeth. The first portion may be coupled to a rotating part of the vehicle while the second portion may be coupled to a stationary part of the vehicle. The second portion may include actuating devices to actuate the sliding of the second set of teeth, the actuating devices including a motion source, elastic elements, and one or more ramps.

Abstract: Methods and systems are provided for a vehicle park lock. In one example, the park lock may be configured with a first portion having a first set of teeth and a second portion having a second set of teeth configured to engage with the first set of teeth. The first portion may be coupled to a rotating part of the vehicle while the second portion may be coupled to a stationary part of the vehicle. The second portion may include actuating devices to actuate the sliding of the second set of teeth, the actuating devices including a motion source, elastic elements, and one or more ramps.

Abstract: A heterostructure body with a buffer region, and a barrier region disposed on the buffer region is provided. A gate trench is formed in the barrier region. A layer of doped semiconductor material that fills the gate trench is formed. The doped semiconductor material in the gate trench locally depletes a subjacent section of the two-dimensional charge carrier gas channel at zero bias. A layer of electrically conductive material is formed on the doped semiconductor material. The layer of doped semiconductor material is structured to form a gate structure that includes a narrower portion of the doped semiconductor material that is disposed in the gate trench, a wider portion of the doped semiconductor material that is above the trench, and a gate electrode portion of the electrically conductive material that completely covers the wider portion of the doped semiconductor material.

Abstract: A heterostructure body with a buffer region, and a barrier region disposed on the buffer region is provided. A gate trench is formed in the barrier region. A layer of doped semiconductor material that fills the gate trench is formed. The doped semiconductor material in the gate trench locally depletes a subjacent section of the two-dimensional charge carrier gas channel at zero bias. A layer of electrically conductive material is formed on the doped semiconductor material. The layer of doped semiconductor material is structured to form a gate structure that includes a narrower portion of the doped semiconductor material that is disposed in the gate trench, a wider portion of the doped semiconductor material that is above the trench, and a gate electrode portion of the electrically conductive material that completely covers the wider portion of the doped semiconductor material.

Abstract: A method is described for the total phosphine detection in cereal caryopses, comprising the steps of inserting a sample of cereal caryopses inside a container (1) equipped with hermetic closure (2); adding to the sample an aqueous solution of H2SO4 with a v/v concentration in the range of 5-20%, with obtainment of an aqueous dispersion, and hermetically closing the first container (1); subjecting the aqueous dispersion contained in the first container (1) to the action of microwaves for a time not greater than 3 minutes; drawing a predetermined volume of gas overlying the aqueous dispersion and detecting the phosphine possibly present by means of colorimetric and/or spectrophotometric methods, preferably by bringing it into contact with a predetermined volume of an aqueous solution of AgNO3 of known molarity, inside a second container (3) with hermetic closure and visually analysing the obtained color and/or spectrophotometrically measuring the absorbance at 400 nm of the aqueous solution.

Abstract: A method is described for the total phosphine detection in cereal caryopses, comprising the steps of inserting a sample of cereal caryopses inside a container (1) equipped with hermetic closure (2); adding to the sample an aqueous solution of H2SO4 with a v/v concentration in the range of 5-20%, with obtainment of an aqueous dispersion, and hermetically closing the first container (1); subjecting the aqueous dispersion contained in the first container (1) to the action of microwaves for a time not greater than 3 minutes; drawing a predetermined volume of gas overlying the aqueous dispersion and detecting the phosphine possibly present by means of colorimetric and/or spectrophotometric methods, preferably by bringing it into contact with a predetermined volume of an aqueous solution of AgNO3 of known molarity, inside a second container (3) with hermetic closure and visually analysing the obtained colour and/or spectrophotometrically measuring the absorbance at 400 nm of the aqueous solution.