Patents by Inventor Marco Taucer
Marco Taucer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955172Abstract: An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.Type: GrantFiled: November 28, 2022Date of Patent: April 9, 2024Assignees: National Research Council of Canada, Quantum Silicon Inc., The Governors of the University of AlbertaInventors: Roshan Achal, Robert A. Wolkow, Jason Pitters, Martin Cloutier, Mohammad Rashidi, Marco Taucer, Taleana Huff
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Patent number: 11749558Abstract: A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.Type: GrantFiled: December 13, 2021Date of Patent: September 5, 2023Assignees: Quantum Silicon Inc., The Governors of the University of Alberta, National Research Council of CanadaInventors: Bruno Vieira Da Cunha Martins, Robert A. Wolkow, Marco Taucer, Jason Pitters
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Publication number: 20230093537Abstract: An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.Type: ApplicationFiled: November 28, 2022Publication date: March 23, 2023Applicants: National Research Council of Canada, Quantum Silicon Inc., The Governors of the University of AlbertaInventors: Roshan Achal, Robert A. Wolkow, Jason Pitters, Martin Cloutier, Mohammad Rashidi, Marco Taucer, Taleana Huff
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Patent number: 11557337Abstract: An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.Type: GrantFiled: June 19, 2019Date of Patent: January 17, 2023Assignees: National Research Council of Canada, Quantum Silicon Inc., The Governors of the University of AlbertaInventors: Roshan Achal, Robert A. Wolkow, Jason Pitters, Martin Cloutier, Mohammad Rashidi, Marco Taucer, Taleana Huff
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Publication number: 20220102197Abstract: A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.Type: ApplicationFiled: December 13, 2021Publication date: March 31, 2022Applicants: Quantum Silicon Inc., The Governors of the University of Alberta, National Research Council of CanadaInventors: Bruno Vieira Da Cunha Martins, Robert A. Wolkow, Marco Taucer, Jason Pitters
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Patent number: 11232976Abstract: A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.Type: GrantFiled: June 29, 2018Date of Patent: January 25, 2022Assignees: National Research Council of Canada, The Governors of the University of Alberta, Quantum Silicon Inc.Inventors: Bruno Vieira Da Cunha Martins, Robert A. Wolkow, Marco Taucer, Jason Pitters
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Publication number: 20210272625Abstract: An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.Type: ApplicationFiled: June 19, 2019Publication date: September 2, 2021Applicants: National Research Council of Canada, Quantum Silicon Inc., The Governors of the University of AlbertaInventors: Roshan Achal, Robert A. Wolkow, Jason Pitters, Martin Cloutier, Mohammad Rashidi, Marco Taucer, Taleana Huff
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Publication number: 20210159116Abstract: A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.Type: ApplicationFiled: June 29, 2018Publication date: May 27, 2021Applicants: Quantum Silicon Inc., The Governors of the University of Alberta, National Research Council of CanadaInventors: Bruno Vieira Da Cunha Martins, Robert A. Wolkow, Marco Taucer, Jason Pitters