Abstract: A structure that includes a Josephson Junction located on a substrate. The Josephson Junction includes a first electrode, a second electrode, and a tunnel junction located between the first electrode and the second electrode. The tunnel junction is located in a recess of the substrate and herein the recess is based on the crystalline lattice of the substrate.

Abstract: A structure that includes a first capacitor plate located on a first surface of a substrate and a second capacitor plate located on a second surface of the substrate. A top surface of the first capacitor plate is angled towards a top surface of the second capacitor plate.

Abstract: A method is provided for fabricating a multilevel wiring structure. A first metallization layer comprising a superconducting metal is formed in a surface of a first substrate. A second substrate is bonded to the first substrate. The second substrate comprises a monocrystalline dielectric material. The second substrate is thinned to form an interlayer dielectric layer which comprises the monocrystalline dielectric material. A second metallization layer comprising a superconducting metal is formed in a surface of the interlayer dielectric layer. The second metallization layer is connected to the first metallization layer by at least one interlayer via in the interlayer dielectric layer.

Abstract: A method is provided to form a superconducting tunnel junction device. An undercut trench is formed in a substrate surface. A first superconducting metal layer is formed on the substrate surface such that the undercut trench causes a discontinuity in the first superconducting metal layer. An insulating layer is formed on the first superconducting metal layer, and a second superconducting metal layer is formed on the insulating layer. The second superconducting metal layer, the insulating layer, and the first superconducting metal layer are patterned to form a superconducting tunnel junction device on the substrate adjacent to the undercut trench, which comprises first and second electrodes, and a barrier layer disposed therebetween. The first electrode comprises a portion of the first superconducting metal layer at the discontinuity thereof, the barrier layer comprises a portion of the insulating layer, and the second electrode comprises a portion of the second superconducting metal layer.

Abstract: A device comprises a switch circuit and control lines. The switch circuit comprises a plurality of signal input/output ports, and a plurality of switch nodes, each switch node comprising a superconducting loop which comprises a plurality of Josephson junctions arranged in a ring configuration. The control lines are configured to selectively apply flux bias control signals to the switch nodes. The plurality of switch nodes is arranged to selectively configure a signal routing path between any pairwise combination of signal input/output ports of the plurality of signal input/output ports, in response to flux bias control signals selectively applied to the switch nodes.

Abstract: A method comprises forming a shadow evaporation mask on a substrate, and utilizing the shadow evaporation mask to perform a double angle evaporation process to form a plurality of tunnel junction devices in each of the different regions of the substrate. The shadow evaporation mask comprises a plurality of patterned openings in different regions of the substrate, wherein each of the patterned openings comprises a same size and shaped opening. The tunnel junction devices each comprise a first metal layer and a second metal layer having an overlapping area, wherein the overlapping areas of the tunnel junction devices are invariant over the different regions of the substrate.

Abstract: Some aspects are directed to an all-on-chip, optoelectronic device for sampling arbitrary, low-energy, near-infrared waveforms under ambient conditions. This solid-state integrated detector uses optical-field-driven electron emission from resonant nanoantennas to achieve petahertz-level switching speeds by generating on-chip attosecond electron burst. Also disclosed is a cross-correlation technique based on perturbation of local electron field emission rates that allows for the full characterization of arbitrary electric fields down to 1 femtojoule, and/or on the order of 500 kV/m, using plasmonic nanoantennas.

Abstract: A device comprises a switch circuit and control lines. The switch circuit comprises a plurality of signal input/output ports, and a plurality of switch nodes, each switch node comprising a superconducting loop which comprises a plurality of Josephson junctions arranged in a ring configuration. The control lines are configured to selectively apply flux bias control signals to the switch nodes. The plurality of switch nodes is arranged to selectively configure a signal routing path between any pairwise combination of signal input/output ports of the plurality of signal input/output ports, in response to flux bias control signals selectively applied to the switch nodes.

Abstract: Some aspects are directed to an all-on-chip, optoelectronic device for sampling arbitrary, low-energy, near-infrared waveforms under ambient conditions. This solid-state integrated detector uses optical-field-driven electron emission from resonant nanoantennas to achieve petahertz-level switching speeds by generating on-chip attosecond electron burst. Also disclosed is a cross-correlation technique based on perturbation of local electron field emission rates that allows for the full characterization of arbitrary electric fields down to 1 femtojoule, and/or on the order of 500 kV/m, using plasmonic nanoantennas.

Abstract: A device that is a combination of a superconducting nanowire single-photon detector and a superconducting multi-level memory. These devices can be used to count a number of photons impinging on the device through single-photon to single-flux conversion. Electrical characterization of the device demonstrates single-flux quantum (SFQ) separated states. Optical measurements using attenuated laser pulses with different mean photon number, pulse energies and repetition rates are shown to differentiate single-photon detection from other possible phenomena, such as multiphoton detection and thermal activation. Array devices and methods are also discussed.

Abstract: A device that is a combination of a superconducting nanowire single-photon detector and a superconducting multi-level memory. These devices can be used to count a number of photons impinging on the device through single-photon to single-flux conversion. Electrical characterization of the device demonstrates single-flux quantum (SFQ) separated states. Optical measurements using attenuated laser pulses with different mean photon number, pulse energies and repetition rates are shown to differentiate single-photon detection from other possible phenomena, such as multiphoton detection and thermal activation. Array devices and methods are also discussed.