Abstract: A method of harmonic distortion (HD) macro-model error correction uses a HD simulation macro-model for an electronic device and memory table storing an operating condition/variable that affects HD and HD coefficient value(s). A processor runs the macro-model using information in the memory table for generating HD simulation values. The memory table is initially filled with a first condition/variable and initial HD coefficient. The processor runs the simulation macro-model for generating an initial HD simulation value. An initial Datasheet to initial HD simulation error (D-S error) is determined. Provided the magnitude of D-S error is above a predetermined error bound (PEB), an updated HD coefficient is used for repeating the filling, generating an updated HD simulation value and determining D-S error to obtain a corrected HD coefficient(s) which reduces the D-S error<PEB. The corrected HD coefficient(s) is stored in the memory table to update the simulation macro-model.

Abstract: A method of harmonic distortion (HD) versus load modeling. A macro-model circuit is provided including a sub-circuit block(s) modeling an electronic device and an HD generation block in a signal path of the macro-model circuit that includes an HD equation relating a load current parameter responsive to an input voltage (Vin(t)). Responsive to receiving Vin(t) at an input of the macro-model circuit under a set of operating conditions including the output of the macro-model circuit loaded with an output impedance (Z), a simulated load current (iL) is generated. iL or another load current from iL (iL?) is fed back to the HD generation block to provide its load current parameter. The load current parameter is inputted into the HD equation for the HD equation to become a substituted equation. At least one simulated HD value under loading by Z for the electronic device is generated from the substituted equation.