Abstract: A dual-stripe current-pinned spin valve magnetoresistive read sensor includes a first soft ferromagnetic (FM) layer separated from a second soft FM layer by a first spacer layer formed of conductive material. The first spacer layer is also configured to receive a first biasing current for generating a first magnetic field of sufficient strength to saturate the first soft FM layer. The read sensor further includes a third soft FM layer and a fourth soft FM layer separated by a second spacer layer formed of conductive material. The second spacer layer is configured to receive a second biasing current for generating a second magnetic field of sufficient strength to saturate the fourth soft FM layer. An insulation layer also is disposed between the second soft FM layer and the third FM layer.

Abstract: A dual symmetric spin valve sensor consists of outer ferromagnetic pinned layers which are pinned by a current induced magnetic field. One of the outer pinned layers is magnetically coupled to an inner pinned layer which is pinned so that the magnetization of the other outer and the inner pinned layers are in the same direction. This provides the magnetization for the free layer disposed between the two layers to properly use the spin valve effect. The ferromagnetic layers are separated by conductor layers. The pin layers are synthetic antiferromagnetic layers consisting of the two layers tightly interlayer exchange coupled. The field induced by the sense current pins the pinned layers.

Abstract: The present invention provides an improved synthetic spin valve sensor having a high resistivity antiparallel coupling layer, typically formed of rhenium, between pinned layers. The spin valve sensor of the present invention may be formed having a layered structure as follows: pinning layer/first pinned layer/high resistivity antiparallel coupling layer/second pinned layer/metallic nonferromagnetic spacer layer/free layer. Capping and seed layers typically are also included. The high resistivity of the antiparallel coupling layer of the present invention reduces shunt current through that layer to improve the GMR effect of the spin valve while maintaining sufficient antiparallel coupling between the pinned layers. The antiparallel coupling layer of the present invention also provides improved thermal stability.

Abstract: A magnetoresistive sensor including a magnetoresistive (MR) sensing element, a nonmagnetic layer ("spacer") contacting the magnetoresistive sensing element; a first antiferromagnetic (AFM) layer contacting the nonmagnetic layer such that the nonmagnetic layer is sandwiched between the magnetoresistive sensing element and the antiferromagnetic layer; a ferromagnetic soft adjacent layer (SAL) contacting the antiferromagnetic layer such that the antiferromagnetic layer is sandwiched between the nonmagnetic layer and the soft adjacent layer; and a second antiferromagnetic layer contacting the SAL such that the SAL is sandwiched between the first and second antiferromagnetic layers. The two antiferromagnetic layers provide a stronger pinning effect. In one embodiment of the invention, the magnetoresistive sensing element is an anisotropic magnetoresistive (AMR) sensing element comprising a soft ferromagnetic layer.