Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.

Abstract: A device manufacturing method includes a measurement phase and an exposure phase. The measurement phase includes conditioning a radiation beam with a first beam condition, forming the patterned radiation beam by imparting the radiation beam with the first beam condition with a first pattern in its cross-section, and projecting the patterned beam onto a sensor capable of providing a sensor output signal. The exposure phase includes fast switching the conditioning of the radiation beam to a second beam condition, the second beam condition being different from the first beam condition, forming the patterned radiation beam by imparting the radiation beam with the second beam condition with a second pattern in its cross-section, the second pattern being provided by a patterning device, and projecting the patterned beam onto a target portion of the substrate.

Abstract: An immersion lithographic apparatus is disclosed that has a measurement system or a prediction system for measuring and/or predicting, respectively, an effect associated with a temperature fluctuation of the immersion liquid, and a control system for controlling the or another effect associated with the temperature of the immersion liquid, on the basis of the measurement and/or prediction obtained by the measurement system and/or prediction system, respectively. An associated control system and device manufacturing method is also disclosed.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract: A lithographic apparatus is provided that has a sensor at substrate level, the sensor including a radiation receiver, a transmissive plate supporting the radiation receiver, and a radiation detector, wherein the sensor is arranged to avoid loss of radiation between the radiation receiver and a final element of the radiation detector.

Abstract: The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam.

Abstract: Scatterometry for measuring overlay. A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.

Abstract: Measurement targets for use on substrates, and overlay targets are presented. The targets include an array of first regions alternating with second regions, wherein the first regions include structures oriented in a first direction and the second regions include structures oriented in a direction different from the first direction. The effective refractive index of the two sets of regions are thereby different when experienced by a polarized beam, which will act as a TM-polarized beam when reflected from the first set of regions, but as a TE-polarized beam when reflected from the second set of regions.

Abstract: A sealing member is provided to prevent immersion liquid ingress to a gap between components. The sealing member has a plastic or polymer sealing portion that is adhered to the components forming the gap being sealed. The sealing member is constructed so as to reduce the force-coupling, in particular the time-related force-coupling, between the components being sealed.

Abstract: The overlay error of a target in a scribelane is measured. The overlay error of the required feature in the chip area may differ from this due to, for example, different responses to the exposure process. A model is used to simulate these differences and thus a more accurate measurement of the overlay error of the feature determined.

Abstract: A lithographic apparatus includes a patterning subsystem for transferring a pattern from a patterning device onto a substrate controlled in accordance with recorded measurements of level variations across a surface of the substrate. A level sensor is provided for projecting a level sensing beam of radiation to reflect from a location on the substrate surface and for detecting the reflected sensing beam to record the surface level at said location. The level sensor incorporates at least one moving optical element to scan the substrate surface by optical movement in at least one dimension to obtain measurements of surface level at different locations without mechanical movement between the level sensor and the substrate. Optical path length equalization measures may be employed, using shaped reflectors and/or additional moving mirrors, to avoid focus variation during the scan.

Abstract: The invention relates to detecting targets located within patterns. The invention operates in the pupil plane by filtering the fourier transform from the surrounding pattern. In particular the method includes performing a fourier transform on reflected radiation data to form fourier transform data; removing portions of the fourier transform data which correspond to the target to form reduced fourier transform data; interpolating the portions of the reduced fourier transform data which were removed, to form product fourier transform data; and subtracting the product fourier transform data from the fourier transform data.

Abstract: A scatterometer configured to measure a property of a substrate, includes a radiation source configured to provide a radiation beam; and a detector configured to detect a spectrum of the radiation beam reflected from a target (30) on the surface of the substrate (W) and to produce a measurement signal representative of the spectrum. The apparatus includes a beam shaper (51, 53) interposed in the radiation path between the radiation source and the detector, the beam shaper being configured to adjust the cross section of the beam dependent on the shape and/or size of the target.

Abstract: A member is provided to prevent immersion liquid ingress to a gap between components or to adhere to at least one component to provide a surface to a feature of an immersion system. The member has a plastic sealing portion that is adhered to the component(s). The plastic sealing portion is opaque to DUV radiation. It may be resistant to degradation through exposure to DUV radiation. It may have a liquid phobic coating or property.

Abstract: End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.

Abstract: A lithographic apparatus includes at least one image alignment sensor for receiving radiation projected from an alignment mark on a reticle. Processor processes signals from the sensor(s) to resolve spatial information in the projected alignment mark to establish a reference for measuring positional relationships between a substrate support and the patterning location. Examples of the sensor include line arrays of photodetectors. A single array can resolve spatial information in a plane of the sensor (X, Y direction) and in a perpendicular (Z) direction. At least a final step in establishing the reference position is performed while holding the substrate support stationary. Errors and delays induced by mechanical scanning of prior art sensors are avoided. Alternatively (not illustrated) the sensor is moved for mechanical scanning relative to the substrate support, independently of the main positioning systems.

Abstract: A lithographic apparatus is provided that has a sensor at substrate level, the sensor including a radiation receiver, a transmissive plate supporting the radiation receiver, and a radiation detector, wherein the sensor is arranged to avoid loss of radiation between the radiation receiver and a final element of the radiation detector.

Abstract: The invention relates to a lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, wherein said apparatus is operable to measure higher-order distortions and/or image plane deviations of the patterning device, said apparatus comprising: a device for transmission image detection; and a processor configured and arranged to model higher-order distortions of the patterning device using signals received from the device for transmission image detection; wherein said patterning device has a main imaging field, and a perimeter and said apparatus is operable to model said higher-order distortions using signals resultant from alignment structures comprised in said perimeter and/or in the imaging field.

Abstract: Disclosed is a method of determining higher order distortions of a patterning device of a lithographic apparatus, and associated apparatus. The higher order distortions are measured using the transmission imaging device. In a main embodiment, enhanced reticles are used which may have additional alignment gratings in the perimeter, in the scribe lanes of the image field or in the image field itself.