Abstract: A semiconductor sensor includes a cavity; a fluid connection between the cavity and an inlet area; a pump diaphragm that bounds the cavity; and a measuring diaphragm that bounds the cavity. The fluid connection includes a diffusion channel having multiple openings in the inlet area or multiple diffusion channels having respectively an opening in the inlet area, and it is possible to close at least one of the openings using laser light in order to influence an effective length or an effective cross section of the fluid connection.

Abstract: A semiconductor sensor includes a cavity; a fluid connection between the cavity and an inlet area; a pump diaphragm that bounds the cavity; and a measuring diaphragm that bounds the cavity. The fluid connection includes a diffusion channel having multiple openings in the inlet area or multiple diffusion channels having respectively an opening in the inlet area, and it is possible to close at least one of the openings using laser light in order to influence an effective length or an effective cross section of the fluid connection.

Abstract: A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via portion, a second trench structure, and a second surrounding layer portion, the second via portion being separated by the second trench structure from the second surrounding layer portion; (iii) an insulation layer disposed between the first and the second layer, the insulation layer having an opening so that the first and the second via portions of the first and the second layers are directly connected to one another in the region of the opening. The first via portion and the second surrounding layer portion at least partially overlap.

Abstract: A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

Abstract: A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

Abstract: A very robust sensor element for an absolute-pressure measurement is described, which is suitable for high temperatures and able to be miniaturized to a large extent. The micromechanical pressure-sensor element includes a sensor diaphragm having a rear-side pressure connection and at least one dielectrically insulated piezo resistor for signal acquisition. Furthermore, the pressure-sensor element has a front-side reference volume, which is sealed by a cap structure spanning the sensor diaphragm. The cap structure is realized as thin-film structure.

Abstract: Described are oligotetracenes of formula I which may either be unsubstituted or carry one or more substituents R and R? which are selected from the group comprising halogen, CN, alkyl or alkoxy radicals containing 1 to 18 carbon atoms, aryl radicals containing up to 10 carbon atoms which may also contain one or more heteroatoms, and/or fluorinated or perfluorinated alkyl or alkoxy radicals containing 1 to 18 carbon atoms, where n is an integer from 1 to 20, preferably 1 to 6, very particularly preferably 1 or 2, and X stands for a single bond, an alklyene group containing 1 to 6 carbon atoms, a hydrocarbon chain having one or more conjugated double bonds, an aryl group, or a system composed of one or more condensed aromatic rings. In the oligotetracenes according to the invention, one or more of the condensed aromatic six-atom rings may be substituted by a five-atom ring which may also contain a heteroatom.

Abstract: A sensor system, in particular a pressure sensor system, having a substrate having a main extension plane, the substrate having at least one trench on a first side, and the trench being provided to produce a diaphragm area on a second side of the substrate diametrically opposite to the first side perpendicularly to the main extension plane, and a decoupling element further being integrated in the material of the diaphragm area.

Abstract: A sensor system for detecting high pressures includes a micromechanical sensor element which is situated on a support and is mounted via this support. A diaphragm is formed in the upper surface of the sensor element, the diaphragm spanning a cavern having a rear opening. The support has a passage opening and is connected to the rear side of the sensor element in such a way that the passage opening opens into the rear opening of the cavern. An annular recess is formed in the rear side of the sensor element, the annular recess being situated above the edge area of the passage opening, so that the joining surface between the sensor element and the support does not extend to the edge of the passage opening.

Abstract: A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via portion, a second trench structure, and a second surrounding layer portion, the second via portion being separated by the second trench structure from the second surrounding layer portion; (iii) an insulation layer disposed between the first and the second layer, the insulation layer having an opening so that the first and the second via portions of the first and the second layers are directly connected to one another in the region of the opening. The first via portion and the second surrounding layer portion at least partially overlap.

Abstract: A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

Abstract: A very robust sensor element for an absolute-pressure measurement is described, which is suitable for high temperatures and able to be miniaturized to a large extent. The micromechanical pressure-sensor element includes a sensor diaphragm having a rear-side pressure connection and at least one dielectrically insulated piezo resistor for signal acquisition. Furthermore, the pressure-sensor element has a front-side reference volume, which is sealed by a cap structure spanning the sensor diaphragm. The cap structure is realized as thin-film structure.

Abstract: A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

Abstract: A sensor system, in particular a pressure sensor system, having a substrate having a main extension plane, the substrate having at least one trench on a first side, and the trench being provided to produce a diaphragm area on a second side of the substrate diametrically opposite to the first side perpendicularly to the main extension plane, and a decoupling element further being integrated in the material of the diaphragm area.

Abstract: Described are oligotetracenes of formula I which may either be unsubstituted or carry one or more substituents R and R? which are selected from the group comprising halogen, CN, alkyl or alkoxy radicals containing 1 to 18 carbon atoms, aryl radicals containing up to 10 carbon atoms which may also contain one or more heteroatoms, and/or fluorinated or perfluorinated alkyl or alkoxy radicals containing 1 to 18 carbon atoms, where n is an integer from 1 to 20, preferably 1 to 6, very particularly preferably 1 or 2, and X stands for a single bond, an alklyene group containing 1 to 6 carbon atoms, a hydrocarbon chain having one or more conjugated double bonds, an aryl group, or a system composed of one or more condensed aromatic rings. In the oligotetracenes according to the invention, one or more of the condensed aromatic six-atom rings may be substituted by a five-atom ring which may also contain a heteroatom.