Abstract: A method (480, 580) of depositing layers of a thin-film transistor on a substrate using a sputter deposition source comprising at least one first pair of electrodes and at least one second pair of electrodes, the method comprising moving (482, 582) the substrate to a first vacuum chamber; depositing (484, 584) a first layer of the layers on the substrate by supplying the at least one first pair of electrodes with bipolar pulsed DC voltage, wherein a first material of the first layer comprises a first metal oxide; moving (486, 586) the substrate from the first vacuum chamber to a second vacuum chamber without a vacuum break; and depositing (488, 588) a second layer of the layers on the first layer by supplying the at least one second pair of electrodes with bipolar pulsed DC voltage, wherein a second material of the second layer comprises a second metal oxide, the second material being different from the first material.

Abstract: An AC power connector for connecting an AC power supply with a device is provided. The AC power connector includes at least one first element connectable with the AC power supply and at least one second element connectable with the device, the first element and the second elements being arranged at a first distance with respect to each other for defining a capacitance, wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element.

Abstract: An AC power connector for connecting an AC power supply with a device is provided. The AC power connector includes at least one first element connectable with the AC power supply and at least one second element connectable with the device, the first element and the second elements being arranged at a first distance with respect to each other for defining a capacitance, wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element.

Abstract: An apparatus for depositing a material on a substrate is described. The apparatus includes a vacuum chamber; a substrate receiving portion in the vacuum chamber for receiving the substrate during deposition of the material; a target support configured to hold a target during deposition of the material on the substrate; a plasma generating device in the vacuum chamber for generating a plasma between the substrate receiving portion and the target support; and a first gas inlet for providing a supersonic stream of a gas, wherein the gas inlet is directed towards the substrate receiving portion. Further, a method for depositing a material on a substrate in a vacuum chamber is described. The method includes forming a plasma between the substrate and a target; releasing particles from the target using the plasma; and directing a supersonic stream of gas towards the substrate surface, on which the material is to be deposited.

Abstract: A method of producing a semiconductor device is provided, the semiconductor device including a substrate, a semiconductor layer and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.

Abstract: An deposition apparatus for forming a deposition material layer on a substrate is described. The deposition apparatus includes a substrate support adapted for holding a substrate; and an edge (660) exclusion mask (640) for covering a periphery of the substrate (610) during layer deposition. The mask has at least one frame portion defining an aperture. The at least one frame portion of the mask is adapted for being moved (670,680) with respect to the substrate depending on the amount of deposition material deposited on the at least one frame portion of the mask. Further, a method for depositing a deposition material layer on a substrate using an edge exclusion mask is described.

Abstract: A cathode assembly for a sputter deposition apparatus and a method for coating a substrate is provided. The cathode assembly has a coating side for coating on a substrate. Further, the cathode assembly includes a rotary target assembly adapted for rotating a target material around a rotary axis; at least a first magnet having an inner magnet pole and at least one outer magnet poles and being adapted for generating one or more plasma regions. The cathode assembly has a first angular coordinate for a magnet pole, the magnet pole being provided for the coating side, and a second angular coordinate for a further magnet pole, the magnet pole being provided for the coating side; wherein the first angular coordinate and the second angular coordinate define an angle a larger than about 20 degrees and smaller than about 160 degrees.

Abstract: The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one rotatable target over the substrate; varying the relative position between the at least one target and the substrate. In addition, the present disclosure describes varying the distance between a target and a substrate during the sputter process. The present disclosure further describes a system for coating a substrate.

Abstract: A method is provided for coating a substrate (100) with a cathode assembly (10) having a rotatable target (20). The rotatable target has at least one magnet assembly (25) positioned there within. The method includes positioning the magnet assembly at a first position so that it is asymmetrically aligned with respect to a plane (22) perpendicularly extending from the substrate (100) to the axis (21) of the rotatable target for a predetermined first time interval; positioning the magnet assembly at a second position that is asymmetrically aligned with respect to said plane (22) for a predetermined second time interval; and providing a voltage to the rotatable target that is varied over time during coating. Further, a coater is provided that includes a cathode assembly with a rotatable curved target; and two magnet assemblies positioned within the rotatable curved target wherein the distance between the two magnet assemblies can be varied.

Abstract: The invention relates to an arrangement for the coating of substrates, which comprises an evaporation source and a vapor barrier between the evaporation source and the substrate. The vapor barrier is maintained at a temperature which is at least equal to or above the vaporization temperature of the material to be vaporized. The vapor barrier is implemented as a quartz valve, which includes a spherical closure part connected with a movable rod. In a first position this spherical closure part closes a vapor conducting tube, which is connected with the evaporation source, and, in a second position, the spherical closure part abuts a spherical calotte which seals off a quartz tube.

Abstract: The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one target over the substrate; varying the relative position between the at least one target and the substrate to a first position (I), which first position is maintained for a predetermined first time interval; and varying the relative position between the at least one target and the substrate to a second position (II), which second position is maintained for a predetermined second time interval. The present disclosure further describes a system for coating a substrate.

Abstract: The present disclosure relates to an anode rod for a sputtering system comprising a target, a lateral surface area of the anode rod is at least 2 times greater than the lateral surface area of the a circular cylinder having the same volume. Further, the present disclosure relates to a sputtering system comprising at least one anode rod, wherein the anode rod having a lateral surface area that is at least 2 times greater than the lateral surface area of the a circular cylinder having the same volume, and at least one sputtering cathode assembly comprising a backing device selected of the group consisting of a backing plate for a planar target, and a target backing tube for a rotatable cylindrical target.

Abstract: A sputter deposition system adapted for depositing a thin film onto a substrate surface is provided. The system includes a cathode assembly having at least two cathode targets opposing the substrate surface and adapted for providing cathode material for forming the thin film. A plasma source is adapted for generating a plasma for sputtering cathode material off the at least two cathode targets. A magnetic field generator is adapted for providing a magnetic field which is controllable independently of the plasma source such that such that a difference between high deposition rate portions and low deposition rate portions is compensated by the action of the magnetic field on charged particle movements.

Abstract: A method of producing a semiconductor device is provided, the semiconductor device including a substrate, a semiconductor layer and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.

Abstract: A method is provided for coating substrates with at least one cathode assembly having a rotatable target, the rotatable target being provided with at least one magnet assembly positioned there within. The method includes providing a potential difference between the substrate and the rotatable target that is varied over time during coating. Further, the method may include positioning the magnet assembly with respect to the rotatable target so that the magnet assembly is asymmetrically aligned with respect to a plane perpendicularly extending from the substrate to the axis of the rotatable target for a predetermined first time interval. The magnet assembly is then moved to a second position that is also asymmetrically aligned. Further, a coater for coating substrates is provided including a cathode assembly with a rotatable curved target and two magnet assemblies positioned within the rotatable curved target.

Abstract: A magnet/target assembly 1 comprises a target 2 consisting of a plurality of (virtual) segments 2.1, 2.2, 2.3, 2.4, 2.5, 2.6 arranged side by side, each of them extending along the longitudinal axis x of the target 2. Each of the plurality of target segments 2.1, 2.2, 2.3, 2.4, 2.5, 2.6 has a magnet system 3.1, 3.2, 3.3, 3.4, 3.5, 3.6 attributed to the respective target segment. In an embodiment of the target/magnet assembly 1 according to the present invention the magnet systems 3.1, 3.2, 3.3, 3.4, 3.5, 3.6 are arranged mutually offset relative to their respective adjacent magnet systems 3.1, 3.2, 3.3, 3.4, 3.5 and 3.6, respectively, while scanning the target segments 2.1, 2.2, 2.3, 2.4, 2.5 and 2.6, respectively. Particularly, the first magnet system 3.1, the third magnet system 3.3 and the fifth magnet system 3.5 are a first group of magnet systems moving parallel and synchronously with each other, and the second magnet system 3.2, the forth magnet systems 3.4 and the sixth magnet system 3.

Abstract: An organic evaporator for applying organic vapor to a substrate at a coating rate, the organic evaporator comprising a distribution pipe with at least one nozzle outlet; and a measurement device for acquiring measurement data about at least one characteristic property of the organic vapor.

Abstract: The invention relates to an evaporator arrangement with a crucible, wherein the crucible is divided into at least two zones, each of which is heated to different temperatures. The first zone is a melt-down zone and the second zone the evaporation zone proper. The evaporator arrangement is preferably for the evaporation of metals. If metals are evaporated, a metal wire is preferably guided into the melt-down zone. However, metal alloys can also be evaporated thereby that one or several metal wires comprised of different materials are guided into the melt-down zone. Between the melt-down zone and the evaporator zone a heating zone may be provided.

Abstract: An evaporator device for coating substrates, in particular for applying an aluminum layer of OLEDs. To attain high evaporator tube temperatures, such as are required for example for the vaporization of materials with low vapor pressure, the heating system is placed into the interior of the evaporator tube. The thermal losses are thereby minimized and higher tube temperatures are possible at comparably coupled-in heating power.

Abstract: A vapor deposition device for the vapor deposition of a substrate, and specifically particular of a substrate comprising heat-sensitive substances, for example OLEDs. To keep heat away from these substances, the vapor deposition device includes an evaporator tube with a special nozzle bar. This nozzle bar, which comprises several linearly arranged openings, projects with respect to the evaporator tube in the direction toward the substrate to be coated.