Abstract: A substrate processing system includes a substrate support and a controller. The substrate support includes a lift pad, a plurality of zones, and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. The controller is configured to determine a rotational position of a substrate arranged on the lift pad, selectively rotate the lift pad to adjust the substrate to the rotational position, and control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones based on the rotational position.

Abstract: A system includes memory that stores compensation information that associates process setpoint temperatures with respective adjustment values. The respective adjustment values include a first adjustment value corresponding to a first temperature compensation scheme and at least one second adjustment value corresponding to a second compensation scheme. A temperature compensation module receives a first process setpoint temperature, retrieves the compensation information from the memory based on the received first process setpoint temperature, calculates a first compensated temperature based on the received first process setpoint temperature, the first adjustment value, and the second adjustment value, and controls a temperature of a component of a substrate processing system according to the first compensated temperature.

Abstract: A system includes memory that stores compensation information that associates process setpoint temperatures with respective adjustment values. The respective adjustment values include a first adjustment value corresponding to a first temperature compensation scheme and at least one second adjustment value corresponding to a second compensation scheme. A temperature compensation module receives a first process setpoint temperature, retrieves the compensation information from the memory based on the received first process setpoint temperature, calculates a first compensated temperature based on the received first process setpoint temperature, the first adjustment value, and the second adjustment value, and controls a temperature of a component of a substrate processing system according to the first compensated temperature.

Abstract: A method of transferring a multi-variate process control model from one RF-powered plasma processing chamber (the reference chamber) to another nominally identical RF-powered plasma processing chamber (the target chamber) comprises first determining a multi-variate process control model on the reference tool based upon sensor data, 100. Then, a set of sensor data is taken for the reference chamber by running a designed experiment, 102, and a corresponding set of sensor data is taken for the target chamber using the same designed experiment, 104. The relationship between the reference and target chambers is determined by comparing the results of the designed experiments and calculating a transform matrix representing differences between the two chambers, 106. Finally, the process control model is transformed from the reference chamber to the target chamber using the transform matrix thus obtained, 108.

Abstract: A method of fault identification on a semiconductor manufacturing tool includes monitoring tool sensor output, establishing a fingerprint of tool states based on the plurality of sensors outputs, capturing sensor data indicative of fault conditions, building a library of such fault fingerprints, comparing present tool fingerprint with fault fingerprints to identify a fault condition and estimating the effect of such a fault condition on process output. The fault library is constructed by inducing faults in a systematic way or by adding fingerprints of known faults after they occur.

Abstract: A method of transferring a multi-variate process control model from one RF-powered plasma processing chamber (the reference chamber) to another nominally identical RF-powered plasma processing chamber (the target chamber) comprises first determining a multi-variate process control model on the reference tool based upon sensor data, 100. Then, a set of sensor data is taken for the reference chamber by running a designed experiment, 102, and a corresponding set of sensor data is taken for the target chamber using the same designed experiment, 104. The relationship between the reference and target chambers is determined by comparing the results of the designed experiments and calculating a transform matrix representing differences between the two chambers, 106. Finally, the process control model is transformed from the reference chamber to the target chamber using the transform matrix thus obtained, 108.

Abstract: A method of fault identification on a semiconductor manufacturing tool includes monitoring tool sensor output, establishing a fingerprint of tool states based on the plurality of sensors outputs, capturing sensor data indicative of fault conditions, building a library of such fault fingerprints, comparing present tool fingerprint with fault fingerprints to identify a fault condition and estimating the effect of such a fault condition on process output. The fault library is constructed by inducing faults in a systematic way or by adding fingerprints of known faults after they occur.