Abstract: The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and wherein said protective layer comprises an oxidized surface.

Abstract: A method is provided of processing substrate holder material for a substrate holder on which on a first side of said substrate holder a semiconductor substrate is to be placed for layered deposition of various semiconductor materials on the semiconductor substrate using induction heating. The method includes the operations of determining a first electrical resistivity at at least one measuring position on said substrate holder material, comparing said first electrical resistivity with a second reference electrical resistivity and adapting said substrate holder material in correspondence with said comparison. Also a substrate holder is provided which is processes by such a method.

Abstract: The invention relates to a deposition device for comprising a processing space with a substrate support disposed therein, as well as several lift pins (50), which can be moved into and out of the plane of the substrate support to assist in introducing a semiconductor substrate into the processing space and removing it therefrom. The device is characterized in that the contact surface (52) of the lift pin (50) that is to be brought into contact with the semiconductor substrate and/or the substrate support is provided with a material layer (54) which has a lower hardness than the semiconductor substrate and/or the substrate support. This eliminates the risk of damage being caused to the substrate and/or to the substrate support as a result of said substrate shifting undesirably upon being lifted from and lowered onto the substrate support (susceptor). Thus there is no risk of scratches being formed and of particles being released, which might adversely affect the semiconductor manufacturing process.

Abstract: A method is provided of processing substrate holder material for a substrate holder on which on a first side of said substrate holder a semiconductor substrate is to be placed for layered deposition of various semiconductor materials on the semiconductor substrate using induction heating. The method includes the operations of determining a first electrical resistivity at at least one measuring position on said substrate holder material, comparing said first electrical resistivity with a second reference electrical resistivity and adapting said substrate holder material in correspondence with said comparison. Also a substrate holder is provided which is processes by such a method.

Abstract: The invention relates to a deposition device for comprising a processing space with a substrate support disposed therein, as well as several lift pins (50), which can be moved into and out of the plane of the substrate support to assist in introducing a semiconductor substrate into the processing space and removing it therefrom. The device is characterised in that the contact surface (52) of the lift pin (50) that is to be brought into contact with the semiconductor substrate and/or the substrate support is provided with a material layer (54) which has a lower hardness than the semiconductor substrate and/or the substrate support. This eliminates the risk of damage being caused to the substrate and/or to the substrate support as a result of said substrate shifting undesirably upon being lifted from and lowered onto the substrate support (susceptor). Thus there is no risk of scratches being formed and of particles being released, which might adversely affect the semiconductor manufacturing process.

Abstract: The invention relates to a method for the treatment of a surface of a silicon carbide (SiC) substrate, said substrate being used in semiconductor manufacturing processes. The invention also relates to a SiC substrate for use in semiconductor manufacturing processes treated with the method according to the invention. According to the invention, said method comprising the steps of selective etching the surface of said SiC substrate using a reactive gas mixture, thereby creating a carbon surface layer on said substrate, and removing said carbon surface layer being created on said substrate. Thus, with the method steps according to the invention, SiC substrates can be obtained with a surface structure that complies with the highest standards as regard to dimensions and purity as required in semiconductor manufacturing processes.