Abstract: The power amplifier module comprises a laminate substrate comprising thermal vias and terminals, as well as a platform device with an interconnection substrate of a semiconductor material. This substrate is provided with electrical interconnects at a first side, and having been mounted on the laminate substrate with an opposite second side. Electrically conducting connections extend from the first to the second side through the substrate. A power amplifier device is attached to the second side of the substrate. One of the electrically conducting connection through the interconnection substrate is a grounding path for the power amplifier, while a thermal path is provided by the semiconductor material. There is an optimum thickness for the interconnection substrate, at which both a proper grounding and a acceptable thermal dissipation is effected.

Abstract: The assembly comprises an electronic device (20) that is attached to a first side (11) of a carrier substrate (10) with solder connections (18). The first side (11) of the substrate (10) is provided with bond pads (15) and a solder resist layer (16). The space between the substrate (10) and the electronic device (20) is filled with an encapsulant (19) The substrate (10) further comprises contact pads for connection to an external board. The solder resist layer (16) is patterned according to a pattern that includes an aperture (161) adjacent to a first bond pad (15). This aperture (161) is ring-shaped and forms the circumference of the first bond pad. Herewith, delamination is prevented, also if a via (142) is present in the substrate (10) below the bond pad (15).