Patents by Inventor Marcus Halik

Marcus Halik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130146858
    Abstract: The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23?n(R2?C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3?C1-C18-alkyl), — a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHal?nR23?n(R2?C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3?C1-C18-alkyl), — a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosph
    Type: Application
    Filed: July 19, 2011
    Publication date: June 13, 2013
    Applicant: Heraeuss Precious Metals Metals GmbH & Co., KG
    Inventors: Timo Meyer-Friedrichsen, Knud Reuter, Andreas Elschner, Marcus Halik
  • Publication number: 20120003485
    Abstract: Monolayers of organic compounds are formed on transparent conductive metal oxide surfaces these are used for example in producing organically based electronic components. By selecting the monolayer, the service life of the devices produced therewith may be improved by orders of magnitude.
    Type: Application
    Filed: March 3, 2010
    Publication date: January 5, 2012
    Inventors: Dana Berlinde Habich, Marcus Halik, Oliver Hayden, Günter Schmid
  • Patent number: 7825404
    Abstract: An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.
    Type: Grant
    Filed: August 8, 2008
    Date of Patent: November 2, 2010
    Assignee: Qimonda AG
    Inventors: Marcus Halik, Hagen Klauk, Guenter Schmid, Andreas Walter, Ute Zschieschang
  • Patent number: 7582896
    Abstract: An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.
    Type: Grant
    Filed: February 27, 2006
    Date of Patent: September 1, 2009
    Assignee: Infineon Technologies AG
    Inventors: Marcus Halik, Hagen Klauk, Guenter Schmid, Andreas Walter, Ute Zschieschang
  • Publication number: 20090066345
    Abstract: A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.
    Type: Application
    Filed: March 30, 2005
    Publication date: March 12, 2009
    Applicant: QIMONDA AG
    Inventors: Hagen Klauk, Marcus Halik, Ute Zschieschang, Guenter Schmid, Grzegorz Darlinski, Rainer Waser, Ralf Brederlow
  • Publication number: 20080315192
    Abstract: An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.
    Type: Application
    Filed: August 8, 2008
    Publication date: December 25, 2008
    Inventors: Marcus Halik, Hagen Klauk, Guenter Schmid, Andreas Walter, Ute Zschieschang
  • Patent number: 7466230
    Abstract: A device for the storage of at least one of solid, liquid or gaseous objects. The device including at least one compartment that is configured to contain at least one object. The filling or emptying of the compartment triggers an electrically-readable signal. In one embodiment, the compartment may be mechanically modified and an electrically-readable signal is generated based on a corresponding mechanical change to the compartment. An electrical data memory with at least one memory cell is integrated into the device. The memory cell is assigned to the compartment. The memory cell is configured to adopt a value corresponding to the mechanical change to the compartment. The device also includes an analytical circuit for reading the data memory.
    Type: Grant
    Filed: July 26, 2004
    Date of Patent: December 16, 2008
    Assignee: Hueck Folien Gesellschaft m.b.H.
    Inventors: Martin Bergsmann, Adolf Bernds, Wolfgang Clemens, Axel Gerlt, Marcus Halik, Matthias Müller, Henning Rost, Günter Schmid, Roland Treutlein
  • Publication number: 20080290337
    Abstract: An organic field effect transistor, having a substrate, a source electrode, a drain electrode and a gate electrode and an organic semiconductor material is disclosed. Arranged between the gate electrode and the organic semiconductor material is a dielectric layer (gate dielectric) obtained from a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.
    Type: Application
    Filed: November 17, 2005
    Publication date: November 27, 2008
    Applicant: QIMONDA AG
    Inventors: Marcus Halik, Hagen Klauk, Ute Zschieschang, Guenter Schmid, Franz Effenberger
  • Patent number: 7455795
    Abstract: Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.
    Type: Grant
    Filed: December 29, 2004
    Date of Patent: November 25, 2008
    Assignee: Infineon Technologies AG
    Inventors: Guenter Schmid, Peter Baeuerle, Elena Mean-Osteritz, Marcus Halik, Hagen Klauk
  • Publication number: 20080275273
    Abstract: A process for synthesizing long-chain phosphonic acid derivatives and thiol derivative is disclosed. One embodiment provides organic compounds which can form a self-assembled monolayer and are obtained by reaction of an olefin with a thiocarboxylic acid and subsequent hydrogenation to give the thiol, or with a phosphite and subsequent hydrolysis to give the phosphonic acid.
    Type: Application
    Filed: November 23, 2005
    Publication date: November 6, 2008
    Applicant: QIMONDA AG
    Inventors: Franz Effenberger, Steffen Maisch, Steffen Seifritz, Guenter Schmid, Marcus Halik, Hagen Klauk, Ute Zschieschang
  • Patent number: 7417247
    Abstract: Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory element is formed that includes the polymer as a storage medium. By applying a voltage, the memory element can be switched between a nonconductive and a conductive state.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: August 26, 2008
    Assignee: Infineon Technologies, AG
    Inventors: Günter Schmid, Hagen Klauk, Marcus Halik, Reimund Engl, Andreas Walter
  • Patent number: 7396566
    Abstract: A method for fabricating an organic conductor path on a substrate includes providing a printing stamp with a hydrophobic patterned printing side that is loaded with a printing medium containing an organic conductive polymer and, by bringing it into contact with a hydrophilic substrate, a patterned layer including the organic polymer are formed on the substrate. The method can be operated continuously through selection of suitable geometries for the printing stamp and the substrate.
    Type: Grant
    Filed: February 28, 2005
    Date of Patent: July 8, 2008
    Assignee: Infineon Technologies, AG
    Inventors: Ute Zschieschang, Marcus Halik, Hagen Klauk, Guenter Schmid
  • Patent number: 7390703
    Abstract: A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.
    Type: Grant
    Filed: February 22, 2005
    Date of Patent: June 24, 2008
    Assignee: Infineon Technologies, AG
    Inventors: Hagen Klauk, Marcus Halik, Ute Zschieschang, Guenter Schmid, Stefan Braun
  • Patent number: 7387872
    Abstract: An embodiment of the invention provides a method for the treatment of a substrate made of paper or a substrate containing paper as support material for a semiconductor component. In an embodiment, the substrate surface is contacted with a solution comprising at least one phenol-containing base polymer and/or copolymer and a crosslinker component. A polymer formulation deposits from the solution onto the surface. The solution may further include an acid catalyst. Embodiments include a semiconductor component formed according to the method of the invention.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: June 17, 2008
    Assignee: Qimonda AG
    Inventors: Marcus Halik, Guenter Schmid, Hagen Klauk, Florian Eder, Ute Zschieschang
  • Publication number: 20080099756
    Abstract: An integrated semiconductor memory with a cell array is disclosed. In one embodiment the memory includes a multiplicity of memory cells arranged in rows and columns. In at least one memory cell, an organic selection transistor is integrated in a stack arrangement above an organic storage element.
    Type: Application
    Filed: May 30, 2005
    Publication date: May 1, 2008
    Inventors: Hagen Klauk, Marcus Halik, Ute Zschieschang, Guenter Schmid, Christine Dehm
  • Patent number: 7326957
    Abstract: The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.
    Type: Grant
    Filed: May 23, 2005
    Date of Patent: February 5, 2008
    Assignee: Infineon Technologies AG
    Inventors: Marcus Halik, Hagen Klauk, Ute Zschieschang, Günter Schmid
  • Patent number: 7303940
    Abstract: A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: December 4, 2007
    Assignee: Infineon Technologies AG
    Inventors: Florian Eder, Marcus Halik, Hagen Klauk, Günter Schmid, Ute Zschieschang
  • Publication number: 20070267431
    Abstract: A device for the storage of at least one of solid, liquid or gaseous objects. The device including at least one compartment that is configured to contain at least one object. The filling or emptying of the compartment triggers an electrically-readable signal. In one embodiment, the compartment may be mechanically modified and an electrically-readable signal is generated based on a corresponding mechanical change to the compartment. An electrical data memory with at least one memory cell is integrated into the device. The memory cell is assigned to the compartment and is configured to adopt a value corresponding to the mechanical change to the compartment. The device also includes an analytical circuit for reading data memory.
    Type: Application
    Filed: July 26, 2004
    Publication date: November 22, 2007
    Inventors: Martin Bergsmann, Aldolf Bernds, Wolfgang Clemens, Axel Gerlt, Marcus Halik, Matthias Muller, Henning Rost, Gunter Schmid, Roland Treutlein
  • Patent number: 7298013
    Abstract: Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of ?-? interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: November 20, 2007
    Assignee: Infineon Technologies AG
    Inventors: Guenter Schmid, Marcus Halik, Hagen Klauk, Ute Zschieschang, Franz Effenberger, Markus Schutz, Steffen Maisch, Steffen Seifritz, Frank Buckel
  • Patent number: 7254883
    Abstract: A laminate is formed from a carrier layer and an electrically conductive layer. In one section, the conductive layer is formed into an antenna structure. The laminate is formed by placing a mask onto a packaging film and vapor-depositing aluminum onto the packaging film and the mask. After removal of the mask, only a desired antenna structure remains on a section of the packaging film. Then a microchip, is adhesively bonded to the packaging film and conductively connected to an end of the antenna structure, so that data can be written in or read out without contact in a wireless transponder system.
    Type: Grant
    Filed: May 6, 2005
    Date of Patent: August 14, 2007
    Assignee: Infineon Technologies AG
    Inventors: Günter Schmid, Hagen Klauk, Marcus Halik