Abstract: The present invention relates to compounds of formula (I) as well as to their use as organic doping agent, as transport layer as absorbing layer, as charge injection layer, as organic semiconductor itself, organic semiconductive matrix material or as hole transport layer. The invention also relates to organic semiconductive materials, electronic components, organic field-effect transistor, semiconductor unit and electroluminescent arrangement in which the compounds of formula (I) are used.

Abstract: The present invention relates to an electronic component comprising a cerium IV complex, a doped semi-conductor matrix material comprising the cerium IV complex and at least one electron donor, the use of the cerium IV complex, especially as an organic semi-conductor, as a dopant in organic semiconductor matrix materials and as a charge injector in a charge injection layer, and new cerium IV complexes.

Abstract: The present invention relates to indane derivatives of the formula (I) and mixtures thereof, wherein X is selected from groups of the formulae -A-NH2 or -A-(NAr2), wherein A is a chemical bond or phenylene which is unsubstituted or substituted by 1, 2, 3 or 4 substituents selected from C1-C6 alkyl and C1-C6-alkoxy; Ar is unsubstituted or substituted aryl, wherein two groups Ar bound to the same nitrogen atom may together with the nitrogen atom also form a fused ring system having 3 or more than 3 unsubstituted or substituted rings; and the variables RA, RB, Y, k, I, m, p, q and r are as defined in the claims and the description. The invention further relates to methods for preparing such compounds and their use in organic electronics, in particular as hole transport material or electron blocking material.

Abstract: The present invention relates to new cerium (IV) complexes. Further, the present invention relates to electronically doped semiconductor materials and an electronic component comprising cerium (IV) complexes. A further object of the invention is the use of the cerium (IV) complexes as electron acceptors, especially as p-dopants and electron transport materials in organic electronic components.

Abstract: The present invention relates to an electronically doped semiconductor material and to an electronic component comprising cerium-ethylenediamine ketone-type and cerium-salen-type complexes. The invention also relates to the use of the cerium-ethylenediamine ketone-type and cerium-salen-type complexes as electron acceptors, especially as p-dopants and electron transport materials in organic-electronic components. The invention further relates to novel cerium-ethylenediamine ketone-type and cerium-salen-type complexes.

Abstract: The invention relates to a compound of the general formula I, to an optoelectronic component containing said type of compound, and to the use of such a compound in an optoelectronic component.

Abstract: The present invention relates to an electronic component comprising a cerium IV complex, a doped semi-conductor matrix material comprising the cerium IV complex and at least one electron donor, the use of the cerium IV complex, especially as an organic semi-conductor, as a dopant in organic semiconductor matrix materials and as a charge injector in a charge injection layer, and new cerium IV complexes.

Abstract: The present invention relates to indane derivatives of the formula (I) and mixtures thereof, wherein X is selected from groups of the formula -A-(NAr2), wherein A is a chemical bond or phenylene which is unsubstituted or substituted by 1, 2 or 3 substituents selected from C1-C6-alkyl and C1-C6-alkoxy; Ar is unsubstituted or substituted aryl, wherein two groups Ar bound to the same nitrogen atom may together with the nitrogen atom also form a fused ring system having 3 or more than 3 unsubstituted or substituted rings; and the variables Y, n, m, k and l are as defined in the claims and the description. The invention further relates to methods for preparing such compounds and their use in organic electronics, in particular as hole transport material or electron blocking material.

Abstract: The present invention relates to indane derivatives of the formula (I) and mixtures thereof, wherein X is selected from groups of the formulae -A-NH2 or -A-(NAr2), wherein A is a chemical bond or phenylene which is unsubstituted or substituted by 1, 2, 3 or 4 substituents selected from C1-C6 alkyl and C1-C6-alkoxy; Ar is unsubstituted or substituted aryl, wherein two groups Ar bound to the same nitrogen atom may together with the nitrogen atom also form a fused ring system having 3 or more than 3 unsubstituted or substituted rings; and the variables RA, RB, Y, k, I, m, p, q and r are as defined in the claims and the description. The invention further relates to methods for preparing such compounds and their use in organic electronics, in particular as hole transport material or electron blocking material.

Abstract: The present invention relates to indane derivatives of the formula (I) and mixtures thereof, wherein X is selected from groups of the formula -A-(NAr2), wherein A is a chemical bond or phenylene which is unsubstituted or substituted by 1, 2 or 3 substituents selected from C1-C6-alkyl and C1-C6-alkoxy; Ar is unsubstituted or substituted aryl, wherein two groups Ar bound to the same nitrogen atom may together with the nitrogen atom also form a fused ring system having 3 or more than 3 unsubstituted or substituted rings; and the variables Y, n, m, k and l are as defined in the claims and the description. The invention further relates to methods for preparing such compounds and their use in organic electronics, in particular as hole transport material or electron blocking material.