Patents by Inventor Marcus Stadel

Marcus Stadel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8067315
    Abstract: A nitrogen-containing silicon carbide material may be deposited on the basis of a single frequency or mixed frequency deposition recipe with a high internal compressive stress level up to 1.6 GPa or higher. Thus, this dielectric material may be advantageously used in the contact level of sophisticated integrated circuits, thereby providing high strain levels while not unduly contributing to signal propagation delay.
    Type: Grant
    Filed: March 2, 2009
    Date of Patent: November 29, 2011
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Marcus Stadel, Sven Auerswald
  • Publication number: 20090294810
    Abstract: A nitrogen-containing silicon carbide material may be deposited on the basis of a single frequency or mixed frequency deposition recipe with a high internal compressive stress level up to 1.6 GPa or higher. Thus, this dielectric material may be advantageously used in the contact level of sophisticated integrated circuits, thereby providing high strain levels while not unduly contributing to signal propagation delay.
    Type: Application
    Filed: March 2, 2009
    Publication date: December 3, 2009
    Inventors: Marcus Stadel, Sven Auerswald