Abstract: An EUV collector mirror has a reflection surface (16) to reflect usable EUV light which impinges on the reflection surface (16) from a source region (17) to a subsequent EUV optics. The reflection surface (16) carries a pump light grating structure (19) configured to retroreflect pump light (22) which impinges upon the pump light grating structure (19) from the source region (17) back to the source region (17). The pump light (22) has a wavelength deviating from the wavelength of the usable EUV light. Such EUV collector mirror enables a high conversion efficiency between the energy of pump light of a laser discharged produced plasma (LDPP) EUV light source on the one hand and the resulting usable EUV energy on the other.

Abstract: Lithographic Apparatus, Lens Interferometer and Device Manufacturing Method A lithographic apparatus includes an illumination system that is configured to condition a radiation beam; a projection system that is configured to project at least a portion of the radiation beam as a projected radiation beam; and a lens interferometer for sensing a wavefront state of the projected radiation beam. The lens interferometer is provided with a polarizing element so as to be capable of sensing a polarisation state of the projected radiation beam.

Abstract: Lithographic Apparatus, Control System and Device Manufacturing Method An immersion lithographic apparatus is disclosed that has a measurement system or a prediction system for measuring and/or predicting, respectively, an effect associated with a temperature fluctuation of the immersion liquid, and a control system for controlling the or another effect associated with the temperature of the immersion liquid, on the basis of the measurement and/or prediction obtained by the measurement system and/or prediction system, respectively. An associated control system and device manufacturing method is also disclosed.

Abstract: A sensor for use in a lithographic apparatus, the sensor having a liquid to prevent optical losses, especially when receiving radiation with a high NA. The liquid is fixed between two surfaces by capillary forces in an area through which radiation passes.

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.

Abstract: A sensor for use at substrate level in a high numerical aperture lithographic apparatus, the sensor having a transparent plate that covers a sensing element and includes elements that improve coupling of radiation into the sensing element. The improved coupling elements include a flowing liquid medium disposed between the transparent plate and the sensing element.

Abstract: During an alignment calibration process in a lithographic apparatus using a sensor to detect a property of a projected image at substrate level, a diffuser is inserted into the illumination beam to increase the range of angles of radiation incident on the substrate. Thereby it can be ensured that sufficient radiation enters the sensor even when the is a mismatch between the illumination mode used and the acceptance NA of the sensor.

Abstract: A lithographic apparatus is arranged to project a patterned radiation beam from a patterning device onto a substrate using a projection system. The lithographic apparatus comprises: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; and a measurement system for measuring the wavefront aberration or other property of the apparatus. The measurement system comprises: a source module at the level of the substrate table for providing an effective source of radiation; and a sensor unit at the level of the support, for receiving radiation from the source module through the projection system for performing the measurement.

Abstract: A system and method are used to detect parameters regarding an exposure portion or an exposure beam. The system comprising a substrate stage and a metrology stage. The substrate stage is configured to position a substrate to receive an exposure beam from an exposure portion of a lithography system. The metrology stage has a sensor system thereon that is configured to detected parameters of the exposure system or the exposure beam. In one example, the system is within a lithography system, which further comprises an illumination system, a patterning device, and a projection system. The patterning device patterns a beam of radiation from the illumination system. The projection system, which is located within the exposure portion, projects that pattered beam onto the substrate or the sensor system.

Abstract: A method and apparatus are provided for measuring the apodization of projection optics for use in a lithographic apparatus, the projection optics having an object plane where, in use, a reticle is placed, a pupil plane, and an image plane where, in use, a wafer is placed. The method includes placing one or more Appropriate apertures in said object plane for creating a substantially uniform light distribution, illuminating the or each aperture and measuring the intensity distribution at a plane which is conjugate to the pupil plane in order to calculate the apodization of the projection optics.

Abstract: An analyzer plate positioned between a projection system and a radiation sensor is illuminated by a projected beam of radiation. The analyzer plate includes two crossing regions, each of which transmits radiation with a different polarization direction. The beam of projection radiation is patterned without influencing the polarization of the beam. By patterning the beam of projection radiation so that one region receives more radiation than the other region, the radiation sensor is given polarization selectivity.

Abstract: A method and lithographic apparatus in which a surface of a sensor is protected from dissolution in a liquid through application of a bias voltage to the surface with respect to one or more parts which are also exposed to the liquid.

Abstract: A method and apparatus are provided for measuring the apodization of projection optics for use in a lithographic apparatus, the projection optics having an object plane where, in use, a reticle is placed, a pupil plane, and an image plane where, in use, a wafer is placed. The method includes placing one or more Appropriate apertures in said object plane for creating a substantially uniform light distribution, illuminating the or each aperture and measuring the intensity distribution at a plane which is conjugate to the pupil plane in order to calculate the apodization of the projection optics.

Abstract: A method and apparatus are provided for measuring the apodization of projection optics for use in a lithographic apparatus, the projection optics having an object plane where, in use, a reticle is placed, a pupil plane, and an image plane where, in use, a wafer is placed. The method includes placing one or more Appropriate apertures in said object plane for creating a substantially uniform light distribution, illuminating the or each aperture and measuring the intensity distribution at a plane which is conjugate to the pupil plane in order to calculate the apodization of the projection optics.

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.

Abstract: A lithographic apparatus is provided that has a sensor at substrate level, the sensor including a radiation receiver, a transmissive plate supporting the radiation receiver, and a radiation detector, wherein the sensor is arranged to avoid loss of radiation between the radiation receiver and a final element of the radiation detector.