Patents by Inventor Marcus Walder
Marcus Walder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10957464Abstract: An electrically insulated electrical conductive strip (1), especially for electric motors and transformers, having an electrical conductor (2) in strip form that has an upper face (2a) and a lower face (2b), two lateral edge faces (2c) and one end edge face at each end, and having an electrical insulation (3) disposed on at least one face of the strip (2a, 2b). The insulation (3) has an enamel layer (3a) and an adhesive strip (3b) bonded to the lower face (2b) and/or the upper face (2a) of the electrical conductor (2) in strip form, in each case at least in a region (4) that directly adjoins a lateral edge face (2c).Type: GrantFiled: March 19, 2018Date of Patent: March 23, 2021Assignee: ALANOD GmbH & Co. KGInventors: Marcus Walder, Stefan Ziegler, Volker Wandelt
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Publication number: 20200118707Abstract: An electrically insulated electrical conductive strip (1), especially for electric motors and transformers, having an electrical conductor (2) in strip form that has an upper face (2a) and a lower face (2b), two lateral edge faces (2c) and one end edge face at each end, and having an electrical insulation (3) disposed on at least one face of the strip (2a, 2b). The insulation (3) has an enamel layer (3a) and an adhesive strip (3b) bonded to the lower face (2b) and/or the upper face (2a) of the electrical conductor (2) in strip form, in each case at least in a region (4) that directly adjoins a lateral edge face (2c).Type: ApplicationFiled: March 19, 2018Publication date: April 16, 2020Applicants: ALANOD GMBH & CO. KG, ALCOTEC ALUMINIUM COIL TECHNOLOGY GMBHInventors: MARCUS WALDER, STEFAN ZIEGLER, VOLKER WANDELT
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Patent number: 7701023Abstract: A TFA (thin film on ASIC) image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent. The TFA includes an intermetal dielectric layer, pixel back electrodes, vias, metal contacts, a transparent conductive oxide (TCO) layer, and an intrinsic absorption layer with a thickness between 300 nm and 600 nm. The pixel back electrodes are disposed over the intermetal dielectric layer, which is disposed over the ASIC. The vias connect to the pixel back electrodes and the metal contacts, which are formed in the intermetal dielectric layer. The TCO is disposed above the intrinsic absorption layer, which is disposed above the pixel back electrodes.Type: GrantFiled: October 19, 2007Date of Patent: April 20, 2010Assignee: STMicroelectronics N.V.Inventors: Peter Rieve, Marcus Walder, Konstantin Seibel, Jens Prima, Arash Mirhamed
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Publication number: 20080128697Abstract: The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer is situated and a conductive layer is situated on the barrier layer, and vias being provided for the contact connection to the ASIC, the vias in metal contacts on the ASIC. A TFA image sensor having improved electrical properties is provided. This is achieved in that an intrinsic absorption layer is provided between the TCO layer and the barrier layer with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, the matrix being patterned in the pixel raster.Type: ApplicationFiled: October 19, 2007Publication date: June 5, 2008Applicant: STMicroelectronics N.V.Inventors: Peter Rieve, Marcus Walder, Konstantin Seibel, Jens Prima, Arash Mirhamed
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Patent number: 7382034Abstract: The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner.Type: GrantFiled: May 15, 2002Date of Patent: June 3, 2008Assignee: STMicroelectronics NVInventors: Peter Rieve, Marcus Walder, Konstantin Seibel, Jens Prima, Reinhard Ronneberger, Markus Scholz, Tarek Lulé
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Publication number: 20060249762Abstract: The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component consists of includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure consists of includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate.Type: ApplicationFiled: May 15, 2002Publication date: November 9, 2006Inventors: Peter Rieve, Marcus Walder, Konstantin Seibel, Jens Prima, Reinhard Ronneberger, Markus Scholz, Tarek Lulé
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Publication number: 20060223214Abstract: Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped and at least one layer made of undoped semiconductor material, which is connected to a microelectronic circuit arranged on the substrate by means of an insulating layer, within which are situated connecting means for contact-connecting the optically active thin-film structure to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current.Type: ApplicationFiled: May 19, 2006Publication date: October 5, 2006Applicant: STMicroelectronics N.V.Inventors: Peter Rieve, Konstantin Seibel, Michael Wagner, Jens Prima, Marcus Walder
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Patent number: 7053457Abstract: The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is electrically contacted thereto and made of amorphous silicon a-i:H or alloys thereof, and at least one other optically active layer (8) is disposed upstream from said first layer in the direction of incident light thereof (7). The invention also relates to the production thereof. The aim of the invention is to improve upon an opto-electronic component of the above-mentioned variety in order to obtain high spectral sensitivity within the visible light range and, correspondingly, significantly reduce sensitivity to radiation in the infrared range without incurring any additional construction costs.Type: GrantFiled: February 26, 2002Date of Patent: May 30, 2006Assignee: STMicroelectronics NVInventors: Peter Rieve, Jens Prima, Konstantin Seibel, Marcus Walder
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Publication number: 20060006482Abstract: The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer is situated and a conductive layer is situated on the barrier layer, and vias being provided for the contact connection to the ASIC, the vias in metal contacts on the ASIC. A TFA image sensor having improved electrical properties is provided. This is achieved in that an intrinsic absorption layer is provided between the TCO layer and the barrier layer with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, the matrix being patterned in the pixel raster.Type: ApplicationFiled: July 14, 2003Publication date: January 12, 2006Applicant: STMicroelectronics N.V.Inventors: Peter Rieve, Marcus Walder, Konstantin Seibel, Jens Prima, Arash Mirhamed
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Publication number: 20050042794Abstract: Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped and at least one layer made of undoped semiconductor material, which is connected to a microelectronic circuit arranged on the substrate by means of an insulating layer, within which are situated connecting means for contact-connecting the optically active thin-film structure to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current.Type: ApplicationFiled: September 17, 2004Publication date: February 24, 2005Applicant: STMicroelectronic N.V.Inventors: Peter Rieve, Konstantin Seibel, Michael Wagner, Jens Prima, Marcus Walder
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Publication number: 20040155311Abstract: The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is electrically contacted thereto and made of amorphous silicon a-i:H or alloys thereof, and at least one other optically active layer (8) is disposed upstream from said first layer in the direction of incident light thereof (7). The invention also relates to the production thereof. The aim of the invention is to improve upon an opto-electronic component of tho above-mentioned variety in order to obtain high spectral sensitivity within the visible light range and, correspondingly, significantly reduce sensitivity to radiation in the infrared range without incurring any additional construction costs.Type: ApplicationFiled: April 12, 2004Publication date: August 12, 2004Inventors: Peter Rieve, Jens Prima, Konstantin Seibel, Marcus Walder
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Publication number: 20040113220Abstract: Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate (1) formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure (7, 8, 9) arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped (8) and at least one layer made of undoped (7) semiconductor material, which is connected to a microelectronic circuit arranged on the substrate (1) by means of an insulating layer (4), within which are situated connecting means (2, 3) for contact-connecting the optically active thin-film structure (7, 8, 9) to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current.Type: ApplicationFiled: February 4, 2004Publication date: June 17, 2004Inventors: Peter Rieve, Konstantin Seibel, Jens Prima, Marcus Walder