Abstract: The invention relates to an arrangement with two piezoelectric layers (2, 5) and to a method of operating the arrangement as a filter. One (2) of the two piezoelectric layers (2, 5) in the arrangement is situated between an electrode (3) and a middle electrode (4), and the other one (5) of the two piezoelectric layers (2, 5) is positioned between another electrode (6) and said middle electrode (4) such that a bulk acoustic wave resonator is formed. The one and the other electrode (3, 6) and the middle electrode (4) are connected to circuitry means for applying high-frequency signals to at least one of the two piezoelectric layers (2, 5) such that the bulk acoustic wave resonator has at least one resonance frequency when the circuitry means are in one switching state, and that the bulk acoustic wave resonator has at least one other resonance frequency different from the at least one resonance frequency when the circuitry means are in another switching state.

Abstract: A perovskite-containing composite material comprising a substrate, an intermediate layer of a first titanium-containing perovskite and a covering layer of a second perovskite, both the first and the second perovskites being quaternary or higher-substituted perovskites. This composite material exhibits a single-phase perovskite covering layer and, consequently, can very suitably be used for the manufacture of electronic components and modules comprising integrated passive components. A description is given of a method of manufacturing said composite material.

Abstract: A zero-IF-converter, particularly for digital satellite receivers, comprising a thin-film component including at least two RC filters each including a resistor and a capacitor which each comprise a lower electrode, an upper electrode and a dielectric material, said RC filters being arranged on a common substrate, is characterized by a constant amplitude and phase relationship between the base band signals I and Q.

Abstract: The invention relates to a multiple-component unit in which at least two passive components have been realized one above the other. A multiple-component unit thus comprises at least one resistor and at least one capacitor, or at least two capacitors. This space-saving construction allows for a miniaturization of circuits. A further miniaturization can be achieved in that the multiple-component units are not manufactured as discrete components, but are integrated into ICs.

Abstract: The invention relates to a thin film circuit with component. The thin film circuit comprises a network of capacitors, or a network of capacitors and resistors, or a network of capacitors, resistors and inductances, or a network of capacitors and inductances. Current supply contacts such as, for example, SMD end contacts or bump end contacts render it possible for the thin film circuit to be connected to further components of a circuit or, for example, to be combined with active components through the use of contact surfaces.

Abstract: The present invention provides a new type of thin-film capacitor which is insensitive to breakdown voltages during its mounting on a printed circuit board. Said capacitor has an insulating substrate having at least two internal electrode layers which are mutually separated by means of a dielectric layer. The substrate also has two end contacts each of which are electroconductively connected to one of said internal electrode layers. According to the invention, the capacitor also has breakable electrically conductive means, preferably formed as a metal layer, which means are electrically connected to said end contacts. The presence of said breakable electrically conductive means between said end contacts prevents damage due to electrical storage which can arise during the mounting of the capacitor on a printed circuit board.

Abstract: A semiconductor device, for example an IC, having conductor tracks (3) of a metal (3) exhibiting a better conductance than aluminium, such as copper, silver, gold or an alloy thereof. The tracks are situated on an insulating layer (2) and are connected to a semiconductor region (1A) or to an aluminium conductor track by means of a metal plug (5), for example of tungsten, which is situated in an aperture (4) in the insulating layer (2). The bottom and walls of the aperture (4) are provided with an electroconductive material (6), such as titanium nitride, which forms a diffusion barrier for the metal (3). In accordance with the invention, the insulating layer (2) comprises a sub-layer (2A), which forms a diffusion barrier for the metal (3) and which extends, outside the aperture (4), throughout the surface of the semiconductor body (10). As a result, the conductor tracks (3) no longer have to be provided with a sheath serving as a diffusion barrier for the metal (3).

Abstract: An electronic component has a substrate, electrode layers for the bottom electrode, top electrode and, optionally, one or more intermediate electrodes, and has intermediate functional layers, these electrode layers include an electroconductive oxidic compound, at least one electrode layer is composed of EuO.sub.x, wherein 1.ltoreq.x.ltoreq.2, LiTi.sub.2 O.sub.4, LiV.sub.2 O.sub.4, SrVO.sub.3, Eu.sub.x NbO.sub.3, Na.sub.x WO.sub.3, A.sub.2 P.sub.8 W.sub.32 O.sub.112, wherein A=K, Rb,RTl, Na.sub.x Ta.sub.y W.sub.1-y O.sub.3, Na.sub.1-x Sr.sub.x NbO.sub.3, LaTiO.sub.3 CeTiO.sub.3, CaVO.sub.3, La.sub.1-x Sr.sub.x VO.sub.3, SrCoO.sub.3, CaRuO.sub.3, SrRuO.sub.3, BaRuO.sub.3, BaPbO.sub.3, SrMoO.sub.3, Sr.sub.0.5 La.sub.0.5 O.sub.3, La.sub.4 BaCu.sub.5 O.sub.13-x, La.sub.2-x Sr.sub.x CuO.sub.4-.delta., YBa.sub.2 Cu.sub.3 O.sub.7-.delta., Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8.sub.+d, Bi.sub.2 Sr.sub.2 CuO.sub.6+d, Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10+d, Tl.sub.2 Ba.sub.2 CaCu.sub.2 O.sub.8, TlBa.sub.2 CuO.sub.

Abstract: A method of manufacturing monolayer capacitors having a ferroelectric layer on the basis of titanium as a dielectric on a substrate, the ferroelectric layer being located between a first and a second noble metal electrode, in which the ferroelectric layer is formed as a barium titanate layer having a layer thickness in the range of from 0.2 to 0.6 .mu.m in that a stable solution of salts of carbonic acids, alkoxides and/or acetyl acetonates is applied and is thermally decomposed at temperatures in the range of from 500.degree. to 700.degree. C., the solution constituting the ferroelectric layer being adjusted so that after the thermal decomposition process an excess quantity of titanium oxide of about 1 mol. % is obtained, and this coating process being repeated until the desired layer thickness is attained, after which the second noble metal electrode is provided on the ferroelectric layer.

Abstract: A method of manufacturing titanium dioxide powder by hydrolysis of a titanium alcoholate, in which the titanium alcoholate is made to react with a 10M acetic acid aqueous solution and an aqueous ethanol solution under an N.sub.2 atmosphere, the precipitate consisting of titanium dioxide is separated from the liquid phase after a reaction time of 24 hours, the precipitate is rinsed with deionized water and subsequently with an aqueous ammoniacal solution having a pH value of 9, and the phases are separated.

Abstract: A method of manufacturing ceramic powders having the perovskite structure by means of a reaction in an aqueous solution, in which a homogeneous aqueous solution comprising a strong organic base and comprising at least one alkaline-earth metal salt and at least one zirconium salt and/or at least one titanium salt is converted at a reaction temperature in the range from 70.degree. to 150.degree. C., and water adhering to the reaction product is removed, or in which an alkaline-earth metal-titanium-acetate gel having a strong organic base is converted at a reaction temperature in the range from 110.degree.-180.degree. C., and water adhering to the reaction product is removed.

Abstract: A method of manufacturing powdered barium titanate, in which titanium dioxide is made to react with barium hydroxide, excluding CO.sub.2 at a temperature in the range from 60.degree. to 95.degree. C., amorphous titanium dioxide having a water content of .apprxeq.0.5 mol. being made to react with excess barium hydroxide in water, and being dried after removing the excess barium ions.