Patents by Inventor Marek Chmielowski

Marek Chmielowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10732817
    Abstract: An electronic apparatus is provided. The electronic apparatus includes a display configured to display a text input image, a detector configured to detect a touch, and a controller configured to control the display to change a character displayed on the text input image to a different character in response to a touch drag being detected by the detector, wherein a speed of changing the character is differently adjusted according to a characteristic of the touch drag.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: August 4, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Roman Frączek, Wojciech Rosloniec, Marcin Michal Ziólek, Marek Chmielowski
  • Publication number: 20170038939
    Abstract: An electronic apparatus is provided. The electronic apparatus includes a display configured to display a text input image, a detector configured to detect a touch, and a controller configured to control the display to change a character displayed on the text input image to a different character in response to a touch drag being detected by the detector, wherein a speed of changing the character is differently adjusted according to a characteristic of the touch drag.
    Type: Application
    Filed: April 7, 2016
    Publication date: February 9, 2017
    Inventors: Roman FRACZEK, Wojciech ROSLONIEC, Marcin Michal ZIÓLEK, Marek CHMIELOWSKI
  • Patent number: 4923264
    Abstract: An electro-optic coupler made of consecutively deposited layers of semiconductor material has an one waveguide layer a multiple-quantum-well structure which exhibits a strong index of refraction dispersion in response to an electric field. Another waveguide layer separated from the multiple-quantum-well structure by a coupling layer is made of a bulk semiconductor material having an index of refraction which is comparatively unaffected by the electric field and which is substantially equal to one of the values of the index of refraction that the quantum well structure can assume. Resonant coupling of the waveguide layers is affected by a uniform electric field generated by a voltage applied between metalization on a confinement layer covering the top waveguide and a substrate on which the waveguide layers and coupling layer are grown over a lower confinement layer. When the indices of refraction of the two waveguides are equal, light injected into one waveguide is switched to the other.
    Type: Grant
    Filed: January 18, 1989
    Date of Patent: May 8, 1990
    Assignee: University of Pittsburgh of the Commonwealth System of Higher Education
    Inventors: Dietrich W. Langer, Marek Chmielowski