Patents by Inventor Marek Gersbach

Marek Gersbach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8781028
    Abstract: Integrated receiving circuit for radiofrequency signals an amplifying element using the multiplication zone of a reverse biased semiconductor junction operating in Geiger mode for amplifying an input radiofrequency signal (Vin) and converting it into a digital signal. And a digital part for digitally processing the digital signal.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: July 15, 2014
    Assignee: Ecole Polytechnique Federale de Lausanne (EPFL)
    Inventors: Edoardo Charbon, Marek Gersbach, Maximilian Sergio
  • Patent number: 7898001
    Abstract: A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.
    Type: Grant
    Filed: December 3, 2008
    Date of Patent: March 1, 2011
    Assignees: STMicroelectronics (Research & Development) Limited, The University Court of the University of Edinburgh, Ecole Polytechnique Federale De Lausanne
    Inventors: Justin Richardson, Lindsay Grant, Marek Gersbach, Edoardo Charbon, Cristiano Niclass, Robert Henderson
  • Publication number: 20100208845
    Abstract: Integrated receiving circuit for radiofrequency signals an amplifying element using the multiplication zone of a reverse biased semiconductor junction operating in Geiger mode for amplifying an input radiofrequency signal (Vin) and converting it into a digital signal. And a digital part for digitally processing the digital signal.
    Type: Application
    Filed: March 16, 2010
    Publication date: August 19, 2010
    Inventors: Edoardo CHARBON, Marek Gersbach, Maximilian Sergio
  • Publication number: 20100133636
    Abstract: A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.
    Type: Application
    Filed: December 3, 2008
    Publication date: June 3, 2010
    Applicants: STMicroelectronics (Research & Development) Limited, The University Court of The University of Edinburgh, Ecole Polytechnique Federale de Lausanne
    Inventors: Justin Richardson, Lindsay Grant, Marek Gersbach, Edoardo Charbon, Christiano Niclass, Robert Henderson