Patents by Inventor Margaret Ellen Lazzeri

Margaret Ellen Lazzeri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6709608
    Abstract: A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.
    Type: Grant
    Filed: July 22, 2002
    Date of Patent: March 23, 2004
    Assignee: General Electric Company
    Inventors: Thomas Bert Gorczyca, Margaret Ellen Lazzeri, Frederic Francis Ahlgren
  • Patent number: 6504233
    Abstract: A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.
    Type: Grant
    Filed: June 28, 1999
    Date of Patent: January 7, 2003
    Assignee: General Electric Company
    Inventors: Thomas Bert Gorczyca, Margaret Ellen Lazzeri, Frederic Francis Ahlgren
  • Publication number: 20020173117
    Abstract: A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.
    Type: Application
    Filed: July 22, 2002
    Publication date: November 21, 2002
    Inventors: Thomas Bert Gorczyca, Margaret Ellen Lazzeri, Frederic Francis Ahlgren