Patents by Inventor Margaret H. Abraham
Margaret H. Abraham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9679779Abstract: Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to heat. The freestanding film is then selectively heated in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.Type: GrantFiled: March 12, 2013Date of Patent: June 13, 2017Assignee: The Aerospace CorporationInventors: David P. Taylor, Margaret H. Abraham
-
Patent number: 9583354Abstract: Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using laser-assisted chemical vapor deposition (LA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to light and/or heat. The freestanding film is then exposed to a laser beam in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.Type: GrantFiled: August 2, 2011Date of Patent: February 28, 2017Assignee: The Aerospace CorporationInventors: Margaret H. Abraham, David P. Taylor
-
Patent number: 9048179Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.Type: GrantFiled: November 21, 2013Date of Patent: June 2, 2015Assignee: The Aerospace CorporationInventors: Margaret H. Abraham, David P. Taylor
-
Patent number: 8946864Abstract: Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure. The film comprises a metal having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include metal ions that coalesce into a substantially continuous, electrically conductive metal layer, or that undergo covalent bonding, whereas in the absence of the embedded structure the metal ions instead may be free to diffuse through the substrate. The embedded structure may control the diffusion of the metal through the substrate and/or the reaction of the metal within the substrate.Type: GrantFiled: March 16, 2011Date of Patent: February 3, 2015Assignee: The Aerospace CorporationInventors: Margaret H. Abraham, David P. Taylor
-
Patent number: 8866240Abstract: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.Type: GrantFiled: October 18, 2012Date of Patent: October 21, 2014Assignee: The Aerospace CorporationInventors: Margaret H. Abraham, David P. Taylor
-
Publication number: 20140141604Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.Type: ApplicationFiled: November 21, 2013Publication date: May 22, 2014Applicant: THE AEROSPACE CORPORATIONInventors: Margaret H. ABRAHAM, David P. TAYLOR
-
Patent number: 8625064Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.Type: GrantFiled: August 6, 2012Date of Patent: January 7, 2014Assignee: The Aerospace CorporationInventors: Margaret H. Abraham, David P. Taylor
-
Publication number: 20130043486Abstract: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.Type: ApplicationFiled: October 18, 2012Publication date: February 21, 2013Applicant: THE AEROSPACE CORPORATIONInventors: Margaret H. Abraham, David P. Taylor
-
Patent number: 8368155Abstract: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.Type: GrantFiled: August 26, 2010Date of Patent: February 5, 2013Assignee: The Aerospace CorporationInventors: Margaret H. Abraham, David P. Taylor
-
Publication number: 20120301095Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.Type: ApplicationFiled: August 6, 2012Publication date: November 29, 2012Inventors: Margaret H. Abraham, David P. Taylor
-
Publication number: 20120248460Abstract: Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using laser-assisted chemical vapor deposition (LA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to light and/or heat. The freestanding film is then exposed to a laser beam in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.Type: ApplicationFiled: August 2, 2011Publication date: October 4, 2012Inventors: Margaret H. ABRAHAM, David P. Taylor
-
Publication number: 20120235281Abstract: Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure. The film comprises a metal having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include metal ions that coalesce into a substantially continuous, electrically conductive metal layer, or that undergo covalent bonding, whereas in the absence of the embedded structure the metal ions instead may be free to diffuse through the substrate. The embedded structure may control the diffusion of the metal through the substrate and/or the reaction of the metal within the substrate.Type: ApplicationFiled: March 16, 2011Publication date: September 20, 2012Inventors: Margaret H. Abraham, David P. Taylor
-
Patent number: 8269931Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.Type: GrantFiled: September 14, 2009Date of Patent: September 18, 2012Assignee: The Aerospace CorporationInventors: Margaret H. Abraham, David P. Taylor
-
Publication number: 20120049200Abstract: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.Type: ApplicationFiled: August 26, 2010Publication date: March 1, 2012Inventors: Margaret H. Abraham, David P. Taylor
-
Publication number: 20110064370Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.Type: ApplicationFiled: September 14, 2009Publication date: March 17, 2011Inventors: Margaret H. Abraham, David P. Taylor
-
Patent number: 7419915Abstract: A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to make MEMS, including silicon-dioxide patterned films buried in and subsequently released from bulk silicon, as a direct write method of release of patterned structures that enables removal of only that material needed to allow the device to perform to be precisely released, after which, the bulk material can be further processed for additional electrical or packaging functions.Type: GrantFiled: February 17, 2005Date of Patent: September 2, 2008Assignee: The Aerospace CorporationInventors: Margaret H. Abraham, Henry Helvajian, Siegfried W. Janson
-
Patent number: 7419917Abstract: A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.Type: GrantFiled: August 15, 2006Date of Patent: September 2, 2008Assignee: The Aerospace CorporationInventor: Margaret H. Abraham
-
Patent number: 6494402Abstract: A microthruster having an inverted exhaust system traps burst diaphragm fragments providing a clean exhaust while an exhaust port provides increased back pressure for efficient combustion of a propellant charge in a fuel cell. A converging diverging micronozzle provides a predictable exhaust vector for improved microthrusting well suited for propulsion system on small spacecraft.Type: GrantFiled: May 14, 2001Date of Patent: December 17, 2002Assignee: The Aerospace CorporationInventors: Ernest Y. Robinson, Margaret H. Abraham, Peter D. Fuqua
-
Publication number: 20020166922Abstract: A microthruster having an inverted exhaust system traps burst diaphragm fragments providing a clean exhaust while an exhaust port provides increased back pressure for efficient combustion of a propellant charge in a fuel cell. A converging diverging micronozzle provides a predictable exhaust vector for improved microthrusting well suited for propulsion system on small spacecraft.Type: ApplicationFiled: May 14, 2001Publication date: November 14, 2002Applicant: The Aerospace CorporationInventors: Ernest Y. Robinson, Margaret H. Abraham, Peter D. Fuqua
-
Patent number: 6410362Abstract: A clear thermal emissive coating, such as clear polyimide, is deposited directly upon a thin film solar cell forming a flexible thin film solar cell. The thin film solar cell can be deposited on another thermal emissive coating used as a substrate during thin film solar cell semiconductor processing so that resulting flexible thin film solar cell can be illuminated on the top side and eject heat from both sides suitable for forming a solar cell array over a curved surface such as a power sphere nanosatellite with thermal regulation.Type: GrantFiled: August 28, 2000Date of Patent: June 25, 2002Assignee: The Aerospace CorporationInventors: Edward J. Simburger, Michael J. Meshishnek, David G. Gilmore, Dennis A. Smith, Margaret H. Abraham, Frank R. Jeffrey, Paul A. Gierow