Abstract: A cleaning apparatus for cleaning chemically processed articles between chemical processing steps. The cleaning apparatus includes a sealable pressurization vessel. After a chemical process step, an article, such as a semiconductor wafer is placed in the vessel. The vessel is sealed. Vessel pressure is adjusted. Solvent in the vessel is heated to a boil forming a vapor. Solvent vapor is recondensed by a primary condensing coil. Condensed solvent rains onto the article, washing it. After the article is clean, it is dried when a secondary condensing coil condenses the solvent vapor, causing the distilled solvent to rain into and be collected by a collection tray. Collected solvent is channelled into a storage reservoir. The storage reservoir is sealed after all of the solvent is collected. The vessel is opened to remove the cleaned article.

Abstract: A method of forming patterned films on a semiconductor substrate 10 includes the steps of depositing a hardened photo resist underlay 30 onto the substrate, then depositing a polyether sulfone release layer 32, then depositing a photo sensitive resist layer 34 and exposing an etching a metallization pattern 36, 38 to the substrate 10. The structure is then blanket deposited with a conductive layer 40 to thereby create a conductive contact stud 42. The film layer 40 and resist layer 34 are removed by dissolving the polyether sulfone layer 32 in an NMP solution and the photo resist underlayer 30 is then removed using a selective photo resist stripper composition.

Abstract: A method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone layer 50; depositing a film layer 60 onto the wafer, thereby forming a patterned film 62 on the substrate 10; weakening the mechanical bonding strength to the polyether sulfone release layer 50 by immersing it in NMP; stripping off layers 54 and 60 by applying an adhesive backed tape 64 to the top of the film layer and applying a pulling force; and, removing the polyether sulfone release layer 50 by immersing the wafer in a NMP bath.