Patents by Inventor Margaret Kniffin

Margaret Kniffin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Actively preventing charge induced leakage of semiconductor devices
    Patent number: 9790085
    Abstract: A structure for preventing charge induced leakage of a semiconductor device includes a shield separated from a first interconnect by at least a first lateral spacing and separated from a second interconnect by at least a second lateral spacing. The first interconnect is connected to a first junction and the second interconnect is connected to a second junction. A shield bias is connected to the shield to terminate an electromagnetic field on the shield. The shield between the first and second lateral spacings has a minimum width to substantially prevent formation of a conductive channel between the first and second junctions. The shield may be formed over a portion of the first junction and over a portion of the second junction to substantially prevent formation of another conductive channel between the first and second junctions at a location that does not have the first and second lateral spacings.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: October 17, 2017
    Assignee: NXP USA, Inc.
    Inventors: Dubravka Bilic, Andrew C. McNeil, Lianjun Liu, Margaret Kniffin, Chad Dawson, Colin Stevens