Patents by Inventor Margaret Lynn Gotuaco

Margaret Lynn Gotuaco has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide cap layers for low dielectric constant silicon oxide layers
    Patent number: 6750141
    Abstract: A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: June 15, 2004
    Assignee: Applied Materials Inc.
    Inventors: Li-Qun Xia, Paul Fisher, Margaret Lynn Gotuaco, Frederic Gaillard, Ellie Yieh
  • Silicon carbide cap layers for low dielectric constant silicon oxide layers
    Publication number: 20030013295
    Abstract: A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
    Type: Application
    Filed: September 6, 2002
    Publication date: January 16, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Paul Fisher, Margaret Lynn Gotuaco, Frederic Gaillard, Ellie Yieh
  • Silicon carbide cap layers for low dielectric constant silicon oxide layers
    Patent number: 6472333
    Abstract: A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
    Type: Grant
    Filed: March 28, 2001
    Date of Patent: October 29, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Paul Fisher, Margaret Lynn Gotuaco, Frederic Gaillard, Ellie Yieh
  • SILICON CARBIDE CAP LAYERS FOR LOW DIELECTRIC CONSTANT SILICON OXIDE LAYERS
    Publication number: 20020142578
    Abstract: A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
    Type: Application
    Filed: March 28, 2001
    Publication date: October 3, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Paul Fisher, Margaret Lynn Gotuaco, Frederic Gaillard, Ellie Yieh