Abstract: Disclosed is a sensor comprising a substrate, a source contact region, a drain contact region, and the gate oxide of a transistor. A gate electrode is disposed between the gate oxide and a detection electrode made of a nonconducting material. The contact area Asens between the gate electrode and the detection electrode is larger than the contact area Agate between the gate electrode and the gate oxide, whereby the receptor can be immobilized on the surface of the detection electrode in a technically simple manner while the small contact area Agate between the gate electrode and the transistor provides for high sensitivity for detecting the analyte. According to the inventive method for detecting at least one analyte, at least one analyte is brought into contact with a receptor immobilized at the detection electrode so as to modify the electrical charge at the surface of the detection electrode. The analyte is detected by detecting the modified voltage in the transistor.

Abstract: The invention relates to specific, regulatory sequence regions of the alpha smooth muscle actin gene (a-SMA gene), and fusion structures in which said regulatory sequence regions of the a-SMA gene are operationally linked to other functional nucleic acid sequences. The invention also relates to the use of said regulatory sequence regions for cell type specific and differentiation specific reporter expression, for cell type specific and differentiation specific gene changes (alteration, mutation) and for gene expression changes in cells and organisms.