Abstract: An electric lamp has a light-transmitting lamp vessel (1) in which a light source (2) is arranged. At least a portion of the lamp vessel is provided with an interference film (5) for allowing passage of visible-light radiation and reflecting infrared radiation. The interference film has either a first plurality of alternating layers of Si02 and TiO2 or a second plurality of alternating layers of SiO2, TiO2 and Ta2O5. The TiO2 layers in the first plurality of alternating layers have a geometrical thickness of at most 75 nm by inserting relatively thin Si02 interlayers into the TiO2 layers, and the SiO2 interlayers have a geometrical thickness of at least 1 nm and at most 7.5 nm. The TiO2 layers in the second plurality of alternating layers have a geometrical thickness of at most 25 nm by inserting relatively thin Ta2O5 interlayers into the TiO2 layers, and the Ta2O5 interlayers have a geometrical thickness of at least 1 nm and at most 5 nm.

Abstract: The invention relates to a method of manufacturing a micro-electromechanical device (10), in which are consecutively deposited on a substrate (1) a first electroconductive layer (2) in which an electrode (2A) is formed, a first electroinsulating layer (3) of a first material, a second electroinsulating layer (4) of a second material different from the first material, and a second electroconductive layer (5) in which a second electrode (5A) lying opposite the first electrode is formed which together with the first electrode (2A) and the first insulating layer (3) forms the device (10), in which after the second conductive layer (5) deposited, the second insulating layer (4) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer (5).

Abstract: The invention relates to a method of manufacturing a micro-electromechanical device (10), in which are consecutively deposited on a substrate (1) a first electroconductive layer (2) in which an electrode (2A) is formed, a first electroinsulating layer (3) of a first material, a second electroinsulating layer (4) of a second material different from the first material, and a second electroconductive layer (5) in which a second electrode (5A) lying opposite the first electrode is formed which together with the first electrode (2A) and the first insulating layer (3) forms the device (10), in which after the second conductive layer (5) has been deposited, the second insulating layer (4) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer (5).