Patents by Inventor Mari Tani

Mari Tani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
    Patent number: 6964873
    Abstract: A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.
    Type: Grant
    Filed: April 17, 2000
    Date of Patent: November 15, 2005
    Assignee: Fujitsu Limited
    Inventors: Katsuyoshi Matsuura, Mari Tani, Yoshimasa Horii, Fan Chu, Glen R. Fox, Brian Eastep
  • Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
    Publication number: 20020177243
    Abstract: A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.
    Type: Application
    Filed: April 17, 2000
    Publication date: November 28, 2002
    Inventors: Katsuyoshi Matsuura, Mari Tani, Yoshimasa Horii, Fan Chu, Glen R. Fox, Brian Eastep
  • Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
    Publication number: 20020142489
    Abstract: A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.
    Type: Application
    Filed: January 4, 2002
    Publication date: October 3, 2002
    Inventors: Katsuyoshi Matsuura, Mari Tani, Yoshimasa Horii, Fan Chu, Glen R. Fox, Brian Eastep