Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Abstract: A highly reliable display device is provided. The display device includes a first substrate, a first resin layer over the first substrate, a pixel portion and a terminal portion over the first resin layer, a second resin layer over the terminal portion, and a second substrate over the second resin layer. The pixel portion includes a transistor and a display element electrically connected to the transistor. The terminal portion includes a conductive layer. The first resin layer includes an opening. The conductive layer includes a first region that is exposed in the opening in the first resin layer. The second resin layer includes a region overlapping with the first region. The conductive layer is the same layer as at least one of a gate of the transistor and a source and a drain of the transistor.

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Abstract: A highly reliable display device is provided. The display device includes a first substrate, a first resin layer over the first substrate, a pixel portion and a terminal portion over the first resin layer, a second resin layer over the terminal portion, and a second substrate over the second resin layer. The pixel portion includes a transistor and a display element electrically connected to the transistor. The terminal portion includes a conductive layer. The first resin layer includes an opening. The conductive layer includes a first region that is exposed in the opening in the first resin layer. The second resin layer includes a region overlapping with the first region. The conductive layer is the same layer as at least one of a gate of the transistor and a source and a drain of the transistor.

Abstract: To provide a highly reliable semiconductor device including an oxide semiconductor. The device has a stacked-layer structure including an oxide semiconductor layer and an insulating layer in contact therewith. The oxide semiconductor layer includes a first layer where a channel is formed and a second layer which is between the first layer and the insulating layer and whose energy of the bottom of the conduction band is closer to the vacuum level than that of the first layer. The second layer serves as a barrier layer preventing formation of defect states between the channel and the insulating layer. The first layer and the second layer include a minute crystal part in which periodic atomic arrangement is not observed macroscopically or long-range order in atomic arrangement is not observed macroscopically. For example, a region with a size of 1 nm to 10 nm includes a crystal part having periodic atomic order.

Abstract: Resinous composition comprising: (A) 100 weight parts of (R2SiO2/2)w(RSiO3/2)x(SiO4/2)y(O1/2R1)z wherein R is selected from the group consisting of monovalent hydrocarbon groups having 1 to 10 carbon atoms, R1 is selected from the group consisting of the hydrogen atom and saturated hydrocarbon groups having from 1 to 6 carbon atoms, w is a number from 0 to 0.2, x is a number from 0.4 to 0.9, y is a number from 0.1 to 0.6, z is a number from 0.1 to 0.5, and (w+x+y)=1; (B) 20 to 150 weight parts of an alcohol-based solvent; (C) 100 to 1000 weight parts of a solvent selected from the group consisting of hydrocarbon-based solvents and polydimethylsiloxanes described by the formula Me3SiO(Me2SiO)nSiMe3, wherein Me is the methyl group and n has a value of 0 or 1; (D) 1 to 100 weight parts of a coupling agent selected from the group consisting of alkoxysilanes and silane coupling agents; (E) 0.1 to 20 weight parts of a condensation catalyst, and (F) 0.

Abstract: A viscous liquid vibration damping composition containing (A) 30-95 weight percent of a viscous liquid, and (B) 5-70 weight percent of at least two solid powders having different average particle diameters, where the difference between the respective average particle diameters of the two solid powders is at least 10 &mgr;m. These viscous liquid vibration damping compositions are superior in vibration damping properties, and possess a stable vibration damping characteristic that is not significantly affected by temperature changes.

Abstract: Resinous composition comprising: (A) 100 weight parts of

Abstract: A viscous liquid vibration damping composition containing (A) 30-95 weight percent of a viscous liquid, and (B) 5-70 weight percent of at least two solid powders having different average particle diameters, where the difference between the respective average particle diameters of the two solid powders is at least 10 &mgr;m. These viscous liquid vibration damping compositions are superior in vibration damping properties, and possess a stable vibration damping characteristic that is not significantly affected by temperature changes.

Abstract: A high-refractive-index optical silicone oil comprising a pentasiloxane having the formula RMe2SiO(Me2SiO)3SiMe2R wherein Me is methyl, each R is independently a C8 to C12 aralkyl, and the silicone oil has a refractive index of from 1.45 to 1.50 at 25° C.; a method of preparing a high-refractive-index optical silicone oil; a high-refractive-index optical silicone oil mixture comprising a pentasiloxane having the formula RMe2SiO(Me2SiO)3SiMe2R wherein Me is methyl, each R is independently a C8 to C12 aralkyl, and a disiloxane having the formula RMe2SiOSiMe2R wherein Me and R as defined above and wherein the mixture has a refractive index of from 1.45 to 1.50 at 25° C.; and a method of preparing a high-refractive-index optical silicone oil mixture.

Abstract: A high-refractive-index optical silicone oil comprising a pentasiloxane having the formula RMe2SiO(Me2SiO)3SiMe2R wherein Me is methyl, each R is independently a C8 to C12 aralkyl, and the silicone oil has a refractive index of from 1.45 to 1.50 at 25° C.; a method of preparing a high-refractive-index optical silicone oil; a high-refractive-index optical silicone oil mixture comprising a pentasiloxane having the formula RMe2SiO(Me2SiO)3SiMe2R wherein Me is methyl, each R is independently a C8 to C12 aralkyl, and a disiloxane having the formula RMe2SiOSiMe2R wherein Me and R as defined above and wherein the mixture has a refractive index of from 1.45 to 1.50 at 25° C.; and a method of preparing a high-refractive-index optical silicone oil mixture.

Abstract: An organopolysiloxane composition for viscous fluid couplings permits little torque variation even when used at a high temperature for an extended period of time. The organopolysiloxane composition comprises an organopolysiloxane liquid with a viscosity of 100 to 1,000,000 sq. mm/s and a platinum compound in an amount such that the amount of platinum metal relative to the liquid is 0.1 to 1,000 ppm. The organopolysiloxane liquid is typically a trimethylsiloxy-endblocked polydimethylsiloxane.