Abstract: Semiconductor packages comprising a plurality of lead fingers containing a lead intrusion at the edge of the lead fingers are described. The semiconductor packages comprise an integrated circuit chip that is connected to a die pad and is electrically connected to multiple lead fingers. One or more of the lead fingers may have a lead intrusion disposed on the external exposed lower surface of the lead finger. The lead intrusion may have a height that is about ? to about ½ the height of a lead finger, a width that is about ? to about 1/2 the width of a lead finger, and a depth that is about ¼ to about ¾ the length of the externally exposed lower surface of a lead finger. The lead intrusion increases the area on the lead finger that contacts a bond material, such as solder, and therefore increase the strength of the joint between the semiconductor package and an external surface to which the lead finger is connected (i.e., a PCB).

Abstract: A method and arrangement for packaging a plurality of chip devices. The method includes providing a plurality of bottom leadframes coupled together with rails to form a bottom leadframe assembly and providing a plurality of top leadframes coupled together with rails to form a top leadframe assembly. Dies are placed between the top and bottom leadframes and the top and bottom leadframe assemblies are coupled to one another. The dies are attached to die attach pads of the bottom leadframes and are coupled to the top leadframes with solder bumps. A molded body is placed around the top and bottom leadframes with the dies therebetween and the rails are removed from the top and bottom leadframes, thus providing a plurality of chip devices.

Abstract: A packaging technique that significantly reduces package resistance. According to the invention, lead frames external to the package are brought in direct contact to solder balls on the surface of the silicon die inside the package molding, eliminating resistive wire interconnections. The packaging technique of the present invention is particularly suitable for power transistors.