Patents by Inventor Maria Gromova

Maria Gromova has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing microcystalline silicon germanium suitable for micromachining
    Patent number: 7557027
    Abstract: A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device such as a CMOS electronic circuit. The presented method uses a silicon source and a germanium source in a reaction zone to grow the structural SiGe layer. Hydrogen is introduced into the reaction zone and it may be used to dilute the silicon source and the germanium source. The resultant reaction occurs at temperatures below 450 degrees C., thereby preventing degradation of electronic device and/or other devices/materials located in the substrate.
    Type: Grant
    Filed: January 24, 2006
    Date of Patent: July 7, 2009
    Assignee: Interuniversitair Microelektronica Centrum
    Inventors: Ann Witvrouw, Maria Gromova, Marc Schaekers, Serge Vanhaelemeersch, Brenda Eyckens
  • Method of producing microcrystalline silicon germanium suitable for micromachining
    Publication number: 20060166467
    Abstract: A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device such as a CMOS electronic circuit. The presented method uses a silicon source and a germanium source in a reaction zone to grow the structural SiGe layer. Hydrogen is introduced into the reaction zone and it may be used to dilute the silicon source and the germanium source. The resultant reaction occurs at temperatures below 450 degrees C, thereby preventing degradation of electronic device and/or other devices/materials located in the substrate.
    Type: Application
    Filed: January 24, 2006
    Publication date: July 27, 2006
    Applicant: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Ann Witvrouw, Maria Gromova, Marc Schaekers, Serge Vanhaelemeersch, Brenda Eyckens