Patents by Inventor Maria Luisa Addonizio

Maria Luisa Addonizio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9469896
    Abstract: A thin-film spectrally selective coating for receiver tube of vacuumed type for use in thermodynamic solar installations and operating both at medium temperature (up to 400° C.) and at high temperature (up to 550° C.), coating where the optically absorbing layer is a multilayer of cermet material of type: WyN—AlNx or MoyN—AlNx, material prepared with reactive co-sputtering technique from an Al target and a W or Mo target, process conducted under a transition regimen, under PFM (Plasma Emission Monitoring) or CVM (Cathode Voltage Monitoring) monitoring for the sole Al target, with inletting near the Al target of a N2 amount adequate for obtainment of a high-transparency, high growth rate sub-stoichiometric ceramic AlN and with inletting near the W or Mo target of a N2 amount adequate for obtainment of the sole W2N or Mo2N phase, phase very stable at high temperature, such as to make the cermet material as close as possible to the formulation W2N—AlNx or Mo2N—AlNx (with x comprised between 0.90 and 1.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: October 18, 2016
    Assignee: AGENZIA NAZIONALE PER LE NUOVE TECNOLOGIE, L'ENERGIA E LO SVILUPPO ECONOMICO SOSTENIBILE (ENEA)
    Inventors: Alessandro Antonaia, Salvatore Esposito, Maria Luisa Addonizio, Antonio Guglielmo
  • Publication number: 20140130794
    Abstract: A thin-film spectrally selective coating for receiver tube of vacuumed type for use in thermodynamic solar installations and operating both at medium temperature (up to 400° C.) and at high temperature (up to 550° C.), coating where the optically absorbing layer is a multilayer of cermet material of type: WyN—AlNx or MoyN—AlNx, material prepared with reactive co-sputtering technique from an Al target and a W or Mo target, process conducted under a transition regimen, under PFM (Plasma Emission Monitoring) or CVM (Cathode Voltage Monitoring) monitoring for the sole Al target, with inletting near the Al target of a N2 amount adequate for obtainment of a high-transparency, high growth rate sub-stoichiometric ceramic AlN and with inletting near the W or Mo target of a N2 amount adequate for obtainment of the sole W2N or Mo2N phase, phase very stable at high temperature, such as to make the cermet material as close as possible to the formulation W2N—AlNx or Mo2N—AlNx (with x comprised between 0.90 and 1.
    Type: Application
    Filed: June 14, 2012
    Publication date: May 15, 2014
    Applicant: AGENZIA NAZIONALE PER LE NUOVE TECNOLOGIE, L'ENERGIA E LO SVILUPPO ECONOMICO SOSTENIBILE(ENEA
    Inventors: Alessandro Antonaia, Salvatore Esposito, Maria Luisa Addonizio, Antonio Guglielmo