Patents by Inventor Marian C. Tang

Marian C. Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process and gas mixture for etching aluminum
    Patent number: 4380488
    Abstract: Process and gas mixture for etching aluminum in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the anisotropic character of the etch. A stable uniform plasma is generated at relatively high pressure and power levels, and this provides substantially faster removal of aluminum than has heretofore been possible in planar reactors.
    Type: Grant
    Filed: November 2, 1981
    Date of Patent: April 19, 1983
    Assignee: Branson International Plasma Corporation
    Inventors: Richard F. Reichelderfer, Diane C. Vogel, Marian C. Tang
  • Process and gas mixture for etching silicon dioxide and silicon nitride
    Patent number: 4324611
    Abstract: Process and gas mixture for etching silicon dioxide and/or silicon nitride in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the selectivity of the etch. The process is carried out at relatively high pressure and power levels and provides substantially faster removal of silicon dioxide and/or silicon nitride than has heretofore been possible in planar reactors.
    Type: Grant
    Filed: June 26, 1980
    Date of Patent: April 13, 1982
    Assignee: Branson International Plasma Corporation
    Inventors: Diane C. Vogel, Marian C. Tang, Richard F. Reichelderfer