Patents by Inventor Marian E. Hills

Marian E. Hills has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal ternary sulfides
    Patent number: 4728682
    Abstract: Metal ternary sulfides of the general formula MM'.sub.2 S.sub.4 are synthesized by introducing stoichiometric amounts of nitrate precursors in concentrated nitric acid and heating to approximate dryness to yield a homogeneous powder mixture. The mixture is then exposed to a gaseous H.sub.2 S atmosphere under controlled conditions to produce the desired sulfide.
    Type: Grant
    Filed: September 30, 1985
    Date of Patent: March 1, 1988
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Josephine Covino, Marian E. Hills
  • Multi-color tunable semiconductor device
    Patent number: 4492434
    Abstract: A semiconductor multi-color filter spectrum analyzer is created by multiple pitaxial layers of varying composition. A DC sweep voltage is used to successively deplete the epitaxial layers. An AC voltage is used to modulate the absorption edge of the individual layers.A modification of this device concept is a variable bandwidth detector in which the spectral bandwidth is a function of the applied DC voltage.
    Type: Grant
    Filed: January 7, 1982
    Date of Patent: January 8, 1985
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Nicholas Bottka, Howard Lessoff, Marian E. Hills
  • Method of making avalanche photodiodes
    Patent number: 4403397
    Abstract: A quadrant avalanche photodiode with large surface areas is made using photolithographic planar technology. The use of proton bombardment creates semi-insulating material around the quadrants. Semi-insulating material prevents cross-talk between quadrants.The Schottky barrier quadrant detectors were fabricated using GaAs.sub.1-x Sb.sub.x ternary alloys grown epitaxially on heavily doped GaAs substrates.
    Type: Grant
    Filed: July 13, 1981
    Date of Patent: September 13, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Nicholas Bottka, Marian E. Hills
  • Two color narrow bandwidth detector
    Patent number: 4316206
    Abstract: A narrow two color semiconductor detector created from the built in field tween epitaxial layers due to interface traps. Opposite polarity on opposite sides of the interface result in a net photocurrent created on each side which flows in opposing directions. The substrate supporting the epitaxial layers provides a cutoff filter range for light entering through the substrate.
    Type: Grant
    Filed: April 14, 1980
    Date of Patent: February 16, 1982
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Nicholas Bottka, Marian E. Hills