Abstract: The invention relates to a method of manufacturing a semiconductor device comprising a semiconductor body (1) having a coil (3) with a magnetic core (4). By means of this method, the surface is provided with a first metallization layer (5) having a first pattern of conduction tracks (6) which are embedded in an insulating material (7, 8, 9). A layer of a magnetic material is provided on the surface (10), which faces away from the semiconductor body. A magnetic core is formed in said layer by means of etching. On the magnetic core and on the adjoining surface of the first metallization layer, a second metallization layer (11) with a second pattern of embedded conduction tracks is formed in an insulating material (13, 14). The second pattern is connected to the first pattern in such a way that windings of the coil are formed.

Abstract: The invention relates to a method of manufacturing a semiconductor device comprising a semiconductor body (1) having a coil (3) with a magnetic core (4). By means of this method, the surface is provided with a first metallization layer (5) having a first pattern of conduction tracks (6) which are embedded in an insulating material (7, 8, 9). A layer of a magnetic material is provided on the surface (10), which faces away from the semiconductor body. A magnetic core is formed in said layer by means of etching. On the magnetic core and on the adjoining surface of the first metallization layer, a second metallization layer (11) with a second pattern of embedded conduction tracks is formed in an insulating material (13, 14). The second pattern is connected to the first pattern in such a way that windings of the coil are formed.

Abstract: A method of manufacturing a semiconductor device with a multilayer wiring (6, 11, 14) with aluminum conductor tracks (7, 12, 15) which are insulated from one another by insulating layers (9, 13). According to the method, an aluminum conductor track (20) provided on a surface (1) of a semiconductor body (2) is covered with a layer of insulating material (21), whereupon a contact window (22) with a wall (23) reaching down to the conductor track is formed in this insulating layer. A conductive intermediate layer (24, 28) and an aluminum layer (25, 29) are provided on this wall, whereupon a heat treatment is carried out such that aluminum (26) grows from the conductor track into the contact window. A conductive intermediate layer of titanium is provided on the wall of the contact window. A very thin, closed aluminum layer, which remains closed also during the heat treatment, can be formed on this titanium layer, which can be provided on the wall with a small thickness.