Abstract: A light emitting device and method of forming the same, the light emitting device including: a substrate, a buffer layer disposed on the substrate, a semiconductor mesa disposed on the buffer layer and including a first semiconductor layer, a light emitting active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the first semiconductor layer, a contact layer disposed on an upper surface of the mesa, a passivation layer covering sidewalls of the mesa and the contact layer, and a cap structure including a reflective layer covering an upper surface of the contact layer, and a solder layer including a recess in which the reflective layer is disposed.

Abstract: A light emitting device and method of forming the same, the method including etching grooves into semiconductor layers disposed on a substrate to form mesas, forming an insulating layer on the mesas, etching the insulating layer to expose upper surfaces of the mesas, and forming a reflective contact layer on the mesas. The contact layer may include protrusions disposed in the grooves on the etched insulating layer, and facing sidewalls of the mesas.

Abstract: A light emitting device and method of forming the same, the light emitting device including: a substrate, a buffer layer disposed on the substrate, a semiconductor mesa disposed on the buffer layer and including a first semiconductor layer, a light emitting active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the first semiconductor layer, a contact layer disposed on an upper surface of the mesa, a passivation layer covering sidewalls of the mesa and the contact layer, and a cap structure including a reflective layer covering an upper surface of the contact layer, and a solder layer including a recess in which the reflective layer is disposed.

Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Abstract: In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Abstract: In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.

Abstract: A magnetic recording medium having a Au, Ag-containing magnetic layer having Co, Cr, Ag and Au; the magnetic recording layer having Co-containing magnetic grains surrounded by substantially nonmagnetic Cr-containing grain boundaries; wherein said Ag and said Au are substantially immiscible in the Co-containing magnetic grains is disclosed.

Abstract: A magnetic recording medium having a substrate, a granular magnetic layer and a magnetic cap layer covered with carbon overcoat, in this order, wherein both the granular magnetic and magnetic cap layers contain magnetic grains and non-magnetic grain boundaries, and further wherein the magnetic cap layer has denser grain boundaries and the magnetic cap layer contains substantially no oxide is disclosed. The magnetic cap layer serves as both magnetic layer and corrosion barrier for lower HMS.

Abstract: A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed.

Abstract: High density longitudinal magnetic recording media are formed with two magnetic layers for enhanced SMNR, high signal, low PW 50 and high resolution. The bilayer magnetic structure comprises a first magnetic layer optimized for SMNR and a second magnetic layer formed directly on the first magnetic layer and optimized for Ms. Embodiments of the present invention include first and second magnetic layers containing Co, Cr and Pt, wherein the first magnetic layer has a higher Cr content than the second magnetic layer and the second magnetic layer has a higher Co content than the first magnetic layer.

Abstract: A magnetic recording medium including at least one Cu-containing magnetic recording layer (CuML) comprised of a Cu-containing magnetic alloy material selected from the group consisting of: (a) a CoCrPtBCu alloy having a composition represented by the formula Co100-x-y-z-?CrxPtyBzCu60 , wherein 0<x?20, 0<y?30, 0<z?24, and 0<??10; (b) a CoCrPtBCu alloy having a composition represented by the formula Co100-x-y-z-?CrxPtyBzCu?, wherein 0<x?30, 0<y?30, 7<z?24, and 0<??10; and (c) a CoCrTaCu alloy having a composition represented by the formula Co100-x-y-?CrxTayCu?, containing less than 30 at. % Cr, up to 8 at. % Ta, and up to 10 at. % Cu.