Abstract: An electron beam 3D printing machine, comprising a chamber for generating and accelerating an electron beam and an operating chamber in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber for generating and accelerating an electron beam houses means for generating an electron beam and means for accelerating the generated electron beam, while the operating chamber houses at least one platform for depositing the metal powder, metal powder handling means and electron beam deflection means. The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

Abstract: An electron beam 3D printing machine (1), comprising a chamber (2) for generating and accelerating an electron beam and an operating chamber (3) in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber (2) for generating and accelerating an electron beam houses means (4) for generating an electron beam and means (6) for accelerating the generated electron beam, while the operating chamber (3) houses at least one platform (16) for depositing the metal powder, metal powder handling means (18) and electron beam deflection means (15). The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

Abstract: It relates to a driving device comprising at least one pair of tubular elements or coaxial rollers made of ceramic material, titanium, alumina or the like, positioned opposite each another and at a distance from one another such that at least one photovoltaic cell or associated substrate or the like rests on the opposite ends of said pair of coaxial rollers.

Abstract: The invention relates to an apparatus and process for the production of polycrystalline silicon for photovoltaic applications. The apparatus is characterized in that it comprises of multiple chambers, preferably three, arranged longitudinally one after the other and equipped with: gas immission and extraction means; means for guiding and moving the crucible containing the silicon-based material; insulation and temperature control means; heating means; air-tightness means for each chamber. One of said chambers constitutes the furnace of the apparatus and comprises an area in which the smelting of the material contained in the crucible is carried out, said furnace being equipped with heating means and bearing a heat-stable pedestal, suitable for moving the crucible vertically and thus for introducing it into, or extracting it from the smelting area, respectively.

Abstract: A new photovoltaic device includes at least one front emitter made of a p- or n-doped semiconductor material, coupled with at least one rear part made of an n- or p-doped semiconductor material, wherein the front part of the emitter is connected to a plurality of contacts located at the back of the device by means of one or more diffuser elements in the shape of plates, ducts or generic elements in relief made of p- or n-doped semiconductor material, which extend from the front part of the emitter through all or part of the n- or p-doped part.

Abstract: A process for preparing low-cost photovoltaic modules based on crystalline silicon. The silicon wafers are treated while supported on a substrate having properties compatible with the process.