Patents by Inventor Marie-Claire Cyrille
Marie-Claire Cyrille has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240099164Abstract: A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and a third insulating layer interposed between the first and second layers, in a material having a density higher than that of the material of the second layer.Type: ApplicationFiled: September 14, 2023Publication date: March 21, 2024Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Guillaume Bourgeois, Marie-Claire Cyrille
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Publication number: 20240099168Abstract: A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.Type: ApplicationFiled: September 14, 2023Publication date: March 21, 2024Applicant: Commissariat á I'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Guillaume Bourgeois, Marie-Claire Cyrille
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Patent number: 11404401Abstract: A method of manufacturing an electronic device, including: a) forming a plurality of chips, each including a plurality of connection areas and at least one first pad; b) forming a transfer substrate including, for each chip, a plurality of connection areas and at least one second pad, one of the first and second pads being a permanent magnet and the other one of the first and second pads being either a permanent magnet or made of a ferromagnetic material; and c) affixing the chips to the transfer substrate to connect the connection areas of the chips to the connection areas of the transfer substrate, by using the magnetic force between the pads to align the connection areas of the chips with the corresponding connection areas of the transfer substrate.Type: GrantFiled: May 4, 2018Date of Patent: August 2, 2022Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Stéphane Caplet, Marie-Claire Cyrille, Bertrand Delaet, Sophie Giroud
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Publication number: 20220020923Abstract: A phase-change material includes germanium Ge, tellurium Te and antimony Sb, including at least 37% germanium Ge, the ratio between the quantity of antimony Sb and the quantity of tellurium Te being between 1.5 and 4.Type: ApplicationFiled: July 15, 2021Publication date: January 20, 2022Inventors: Gabriele NAVARRO, Marie-Claire CYRILLE
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Patent number: 11101430Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.Type: GrantFiled: August 5, 2019Date of Patent: August 24, 2021Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Marie-Claire Cyrille, Chiara Sabbione
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Publication number: 20210249599Abstract: A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.Type: ApplicationFiled: February 5, 2021Publication date: August 12, 2021Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Chiara Sabbione, Marie-Claire Cyrille, Camille Laguna
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Publication number: 20200303359Abstract: A method of manufacturing an electronic device, including: a) forming a plurality of chips, each including a plurality of connection areas and at least one first pad; b) forming a transfer substrate including, for each chip, a plurality of connection areas and at least one second pad, one of the first and second pads being a permanent magnet and the other one of the first and second pads being either a permanent magnet or made of a ferromagnetic material; and c) affixing the chips to the transfer substrate to connect the connection areas of the chips to the connection areas of the transfer substrate, by using the magnetic force between the pads to align the connection areas of the chips with the corresponding connection areas of the transfer substrate.Type: ApplicationFiled: May 4, 2018Publication date: September 24, 2020Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Stéphane Caplet, Marie-Claire Cyrille, Bertrand Delaet, Sophie Giroud
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Publication number: 20200052197Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.Type: ApplicationFiled: August 5, 2019Publication date: February 13, 2020Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Marie-Claire Cyrille, Chiara Sabbione
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Patent number: 10535456Abstract: A permanent magnet includes at least two antiferromagnetic layers and at least two first ferromagnetic layers. A magnetization direction of each first ferromagnetic layer is set, by an exchange coupling, with one of the antiferromagnetic layers of the stack, parallel to and in the same direction as the magnetization directions of the other first ferromagnetic layers. The permanent magnet also includes at least one second ferromagnetic layer. A magnetization direction of each second ferromagnetic layer is pinned only by RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling with at least one of the first ferromagnetic layers or with at least one other of the second ferromagnetic layers.Type: GrantFiled: April 16, 2015Date of Patent: January 14, 2020Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Bertrand Delaet, Mathilde Cartier, Marie-Claire Cyrille
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Patent number: 9804234Abstract: A magnetoresistance element can have a substrate; a ferromagnetic seed layer consisting of a binary alloy of NiFe; and a first nonmagnetic spacer layer disposed under and directly adjacent to the ferromagnetic seed layer and proximate to the substrate, wherein the first nonmagnetic spacer layer is comprised of Ta or Ru. A method fabricating of fabricating a magnetoresistance element can include depositing a seed layer structure over a semiconductor substrate, wherein the depositing the seed layer structure includes depositing at least a ferromagnetic seed layer over the substrate. The method further can further include depositing a free layer structure over the seed layer structure, wherein the depositing the ferromagnetic seed layer comprises depositing the ferromagnetic seed layer in the presence of a motion along a predetermined direction and in the presence of a predetermined magnetic field having the same predetermined direction.Type: GrantFiled: January 7, 2015Date of Patent: October 31, 2017Assignees: Allegro MicroSystems, LLC, Commissariat à L'Energie Atomique et aux Energies AlternativesInventors: Cyril Dressler, Claude Fermon, Myriam Pannetier-Lecoeur, Marie-Claire Cyrille, Paolo Campiglio
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Publication number: 20170053724Abstract: A permanent magnet includes at least two antiferromagnetic layers and at least two first ferromagnetic layers. A magnetization direction of each first ferromagnetic layer is set, by an exchange coupling, with one of the antiferromagnetic layers of the stack, parallel to and in the same direction as the magnetization directions of the other first ferromagnetic layers. The permanent magnet also includes at least one second ferromagnetic layer. A magnetization direction of each second ferromagnetic layer is pinned only by RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling with at least one of the first ferromagnetic layers or with at least one other of the second ferromagnetic layers.Type: ApplicationFiled: April 16, 2015Publication date: February 23, 2017Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Bertrand DELAET, Mathilde CARTIER, Marie-Claire CYRILLE
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Patent number: 9529060Abstract: A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.Type: GrantFiled: August 6, 2014Date of Patent: December 27, 2016Assignee: Allegro MicroSystems, LLCInventors: Claude Fermon, Myriam Pannetier-Lecoeur, Marie-Claire Cyrille, Cyril Dressler, Paolo Campiglio
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Publication number: 20150192649Abstract: A magnetoresistance element has a seed layer that promotes an increased magnetic anisotropy of layers of the magnetoresistance element above the seed layer structure.Type: ApplicationFiled: January 7, 2015Publication date: July 9, 2015Applicants: ALLEGRO MICROSYSTEMS, LLC, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Cyril Dressler, Claude Fermon, Myriam Pannetier-Lecoeur, Marie-Claire Cyrille, Paolo Campiglio
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Publication number: 20150194597Abstract: A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.Type: ApplicationFiled: August 6, 2014Publication date: July 9, 2015Applicants: ALLEGRO MICROSYSTEMS, LLC, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Claude Fermon, Myriam Pannetier-Lecoeur, Marie-Claire Cyrille, Cyril Dressler, Paolo Campiglio
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Patent number: 8922285Abstract: The invention relates to a radiofrequency oscillator which incorporates: a spin-polarized electric current magnetoresistive device (6), a terminal (18) for controlling the frequency or amplitude of the oscillating signal, a servo loop (34) connected between the output terminal and the control terminal for applying a control signal to the control terminal in order to slave a characteristic of the oscillating signal to a reference value, the servo loop (34) comprising: a sensor (36) of the amplitude of the oscillating signal oscillations, and a comparator (38) capable of generating the control signal according to the measured amplitude and the reference value.Type: GrantFiled: March 1, 2011Date of Patent: December 30, 2014Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, Centre National de la Recherche ScientifiqueInventors: Dimitri Houssameddine, Bertrand Delaet, Marie-Claire Cyrille, Ursula Ebels, Michael Quinsat
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Patent number: 8823460Abstract: The invention relates to a radiofrequency oscillator which incorporates: a spin-polarized electric current magnetoresistive device (6) for generating an oscillating signal at an oscillation frequency on an output terminal (10), and a terminal (18) for controlling the frequency or amplitude of the oscillating signal, and a feedback loop (44) comprising an amplifier (46) provided with: an input connected to the output terminal (10) of the magnetoresistive device (6) so as to amplify the portion of an oscillating signal detected at the output terminal, and an output connected to the control terminal (18) so as to inject onto said control terminal the amplified portion of the oscillating signal which is phase-related to the oscillating signal generated at the output terminal.Type: GrantFiled: March 1, 2011Date of Patent: September 2, 2014Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Dimitri Houssameddine, Bertrand Delaet, Marie-Claire Cyrille, Ursula Ebels, Michael Quinsat
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Patent number: 8766733Abstract: A radiofrequency oscillator comprises: a free layer (4), a current injector (6) for injecting spin-polarized current into the free layer, this injector having a spin-polarized current injection face (16) directly in contact with the free layer, a magnetoresistive contact (8) having a measurement face (26) directly in contact with the free layer, in order to form, in combination with the free layer, a tunnel junction for measuring the precession of the magnetization of the free layer, a conducting pad (30) directly in contact with the free layer in order to make an electrical current flow through the injector without passing through the magnetoresistive contact. At least part of the measurement face (26) and part of the injection face (16) are placed facing each other on each side of the free layer (4).Type: GrantFiled: December 20, 2010Date of Patent: July 1, 2014Assignees: Commissariat a l'energie atomique et aux energies alternatives, Centre National de la Recherche ScientifiqueInventors: Marie Claire Cyrille, Bertrand Delaet, Ursula Ebels, Dimitri Houssameddine
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Patent number: 8669122Abstract: According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.Type: GrantFiled: May 20, 2011Date of Patent: March 11, 2014Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, Centre National de la Recherche ScientifiqueInventors: Bernard Viala, Marie-Claire Cyrille, Bernard Dieny, Kévin Garello, Olivier Redon
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Patent number: 8655302Abstract: A demodulator of an FM signal modulated about a carrier frequency with a modulation frequency has an RF oscillator configured to be synchronized, under identical conditions of operation, with oscillations at first and second frequencies used in the FM signal to encode respective pieces of information. The oscillator has a magnetoresistive device; and a low-pass filter connected to an output electrode of the magnetoresistive device to filter an oscillating signal, generated by the oscillator and to a rendering terminal to provide, as a demodulated electrical signal, the filtered signal, the cut-off frequency fc at ?3 dB of this filter being strictly lower than the frequency and higher than the modulation frequency.Type: GrantFiled: April 18, 2012Date of Patent: February 18, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Michaël Quinsat, Marie-Claire Cyrille, Ursula Ebels, Jean-Philippe Michel
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Patent number: 8577320Abstract: An oscillation detector having an RF oscillator configured to be synchronized with a first frequency and a comparator for distinguishing the synchronized state from the non-synchronized state of the radiofrequency oscillator on the basis of an oscillating signal produced by the radiofrequency oscillator and indicating the presence of oscillations in a frequency band around the first frequency in response to identifying the synchronized state and, in alternation, indicating the absence of oscillations in this frequency band otherwise.Type: GrantFiled: April 19, 2012Date of Patent: November 5, 2013Assignee: Commissariat a l'energie et aux energies alternativesInventors: Michaël Quinsat, Marie-Claire Cyrille, Ursula Ebels, Jean-Philippe Michel, Michaël Pelissier, Patrick Villard, Mykhailo Zarudniev