Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

Abstract: A system and method for generating predictive images for wafer inspection using machine learning are provided. Some embodiments of the system and method include acquiring the wafer after a photoresist applied to the wafer has been developed; imaging a portion of a segment of the developed wafer; acquiring the wafer after the wafer has been etched; imaging the segment of the etched wafer; training a machine learning model using the imaged portion of the developed wafer and the imaged segment of the etched wafer; and applying the trained machine learning model using the imaged segment of the etched wafer to generate predictive images of a developed wafer. Some embodiments include imaging a segment of the developed wafer; imaging a portion of the segment of the etched wafer; training a machine learning model; and applying the trained machine learning model to generate predictive after-etch images of the developed wafer.

Abstract: A method for applying a deposition model in a semiconductor manufacturing process. The method includes predicting a deposition profile of a substrate using the deposition model; and using the predicted deposition profile to enhance a metrology target design. The deposition model can be calibrated using experimental cross-section profile information from a layer of a physical substrate. In some embodiments, the deposition model is a machine-learning model, and calibrating the deposition model includes training the machine-learning model. The metrology target design may include an alignment metrology target design or an overlay metrology target design, for example.

Abstract: A patterning device configured for use in a lithographic apparatus, the lithographic apparatus being configured to use radiation for imaging a pattern at the patterning device via projection optics onto a substrate. The patterning device including a first component for reflecting and/or transmitting the radiation, and a second component covering at least a portion of a surface of the first component and configured to at least partially absorb the radiation incident on the second component. The second component has a sidewall, wherein at least one part of the sidewall extends away from the first component at an angle, the angle being with respect to a plane parallel to the surface of the first component, and wherein the angle is less than 85 degrees.

Abstract: An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.

Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

Abstract: Methods and apparatuses for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated with electromagnetic radiation having a wavelength of less than 100 nm during a deposition process. Furthermore, an electric field controller is configured to apply an electric field that is oriented so as to force secondary electrons away from the substrate. The irradiation locally drives the deposition process in the selected portion and thereby causes the deposition process to, for example, form a layer of material in a pattern defined by the selected portion.

Abstract: A resist composition having a) metal-containing nanoparticles and/or nanoclusters, and b) ligands and or organic linkers, wherein one or both of a) or b) are multivalent. A resist composition wherein: the resist composition is a negative resist and the nanoparticles and/or nanoclusters cluster upon crosslinking of the ligands and/or organic linkers following exposure to electromagnetic radiation or an electron beam; or the resist composition is a negative resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam allowing the nanoparticles and/or nanoclusters to cluster together; or the resist composition is a positive resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam.