Abstract: The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).

Abstract: The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Abstract: The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).

Abstract: The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Abstract: The present invention relates to the use, as a thin sensitive-material film for bolometric detection, of at least one material based on an alloy comprising at least one chalcogenide, said chalcogen element being chosen from sulfur, selenium, telluride and their mixtures, characterized in that said material furthermore contains a sufficient amount of carbon and/or boron to confer upon the material a temperature coefficient of resistivity value at 300° C. at least equal to 40% of the native value of the temperature coefficient of resistivity of said material at room temperature. The invention also relates to a bolometric device and its production process.

Abstract: The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Abstract: The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).

Abstract: The present invention relates to the use, as a thin sensitive-material film for bolometric detection, of at least one material based on an alloy comprising at least one chalcogenide, said chalcogen element being chosen from sulfur, selenium, telluride and their mixtures, characterized in that said material furthermore contains a sufficient amount of carbon and/or boron to confer upon the material a temperature coefficient of resistivity value at 300° C. at least equal to 40% of the native value of the temperature coefficient of resistivity of said material at room temperature. The invention also relates to a bolometric device and its production process.

Abstract: The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Abstract: The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).

Abstract: The invention relates to the field of the optical recording of information on a medium, such as an optical disc. To read an optical disc in super-resolution mode, a procedure for optimizing the power of the read laser beam is implemented. This optimization is based on the observation that a correlation exists between the power allowing the disc to be read without risk in super-resolution mode and the reflectivity of the sensitive layer containing the information. The reflectivity of the optical disc is measured for several power levels of the read laser, a critical power is determined on the basis of the reflectivity measurements made, and a read power sufficiently above the critical power, so as to be well outside a range of power levels entailing risks, is selected according to the critical power.

Abstract: The invention relates to the field of the optical recording of information on a medium, such as an optical disc. To read an optical disc in super-resolution mode, a procedure for optimizing the power of the read laser beam is implemented. This optimization is based on the observation that a correlation exists between the power allowing the disc to be read without risk in super-resolution mode and the amplitude of the read signal which results from the reading of marks having the smallest possible dimension (marks 2 T). The amplitude of the optical disc is measured for several powers of decreasing values of the read laser, the reduction in amplitude is observed. A read power is selected as a function of the power for which a decrease (for example 5%) is noted in the amplitude measured at the start.

Abstract: The invention relates to the field of the optical recording of information on a medium, such as an optical disc. To read an optical disc in super-resolution mode, a procedure for optimizing the power of the read laser beam is implemented. This optimization is based on the observation that a correlation exists between the power allowing the disc to be read without risk in super-resolution mode and the reflectivity of the sensitive layer containing the information. The reflectivity of the optical disc is measured for several power levels of the read laser, a critical power is determined on the basis of the reflectivity measurements made, and a read power sufficiently above the critical power, so as to be well outside a range of power levels entailing risks, is selected according to the critical power.

Abstract: The optical recording medium comprises an active layer made of inorganic material, presenting a front face for receiving an optical radiation during writing operations, and a rear face. The inorganic material is a tellurium and zinc alloy comprising an atomic percentage of between 60% and 70% of zinc and between 30% and 40% of tellurium. The alloy comprises preferably 65% of zinc and 35% of tellurium. The medium may comprise a semi-reflecting layer arranged on the front face of the active layer and/or an additional metal layer arranged on the rear face and/or a protective layer of polymer material on the rear face. Thus, writing powers, a mark resolution and a storage density corresponding to DVD format specifications may be achieved.

Abstract: The optical recording medium comprises an active layer of inorganic material, able to undergo deformations due to the effect of an optical radiation, presenting a front face designed to receive an optical radiation during writing operations and a rear face. An additional metal layer is arranged on the rear face of the active layer. The additional metal layer preferably has a thickness comprised between 9 nanometers and 12 nanometers. The inorganic material of the active layer can be a tellurium and zinc alloy comprising an atomic percentage of between 60% and 70% of zinc and between 30% and 40% of tellurium, and preferably 65% of zinc and 35% of tellurium. The medium can comprise a semi-reflecting layer arranged on the front face of the active layer and/or a protective layer made of polymer material on the rear face.

Abstract: A process for manufacturing a recordable optical disk including forming a back rewritable layer and depositing a transparent intercalary layer on the back rewritable layer, and forming a front rewritable layer including a metallic alloy and a cermet dielectric such that the front rewritable layer has a transmission rate greater than or equal to about 45%, and a recordable optical disk including a substrate and an active layer including a cermet, wherein the active layer covers at least one back rewritable layer and the active cermet layer has a transmission rate greater than or equal to about 45%.

Abstract: The medium comprises a bilayer stack constituted of an inorganic layer (30) and a semi-reflecting layer (32). The inorganic layer (30) can be deformed under the effect of light radiation (34) passed through the semi-reflecting layer, which lowers the reflection coefficient of the stack. Application to irreversible recording of information data, for example on discs.

Abstract: The optical recording medium comprises an active layer of inorganic material, able to undergo deformations due to the effect of an optical radiation, presenting a front face designed to receive an optical radiation during writing operations and a rear face. An additional metal layer is arranged on the rear face of the active layer. The additional metal layer preferably has a thickness comprised between 9 nanometers and 12 nanometers. The inorganic material of the active layer can be a tellurium and zinc alloy comprising an atomic percentage of between 60% and 70% of zinc and between 30% and 40% of tellurium, and preferably 65% of zinc and 35% of tellurium. The medium can comprise a semi-reflecting layer arranged on the front face of the active layer and/or a protective layer made of polymer material on the rear face.

Abstract: The optical recording medium comprises an active layer made of inorganic material, presenting a front face for receiving an optical radiation during writing operations, and a rear face. The inorganic material is a tellurium and zinc alloy comprising an atomic percentage of between 60% and 70% of zinc and between 30% and 40% of tellurium. The alloy comprises preferably 65% of zinc and 35% of tellurium. The medium may comprise a semi-reflecting layer arranged on the front face of the active layer and/or an additional metal layer arranged on the rear face and/or a protective layer of polymer material on the rear face. Thus, writing powers, a mark resolution and a storage density corresponding to DVD format specifications may be achieved.

Abstract: A process for manufacturing a recordable optical disk including forming a back rewritable layer and depositing a transparent intercalary layer on the back rewritable layer, and forming a front rewritable layer including a metallic alloy and a cermet dielectric such that the front rewritable layer has a transmission rate greater than or equal to about 45%, and a recordable optical disk including a substrate and an active layer including a cermet, wherein the active layer covers at least one back rewritable layer and the active cermet layer has a transmission rate greater than or equal to about 45%.