Patents by Inventor Marie Guillon
Marie Guillon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11800247Abstract: A pixel matrix includes a sub-matrix of four adjacent pixels. Each of the pixels of the sub-matrix comprises: a set of a photoelectric-effect element and a memory point, a detection node, a transfer gate. The binning stage is connected to the set and is common with an adjacent pixel of the sub-matrix. At least one detection node per sub-matrix is common to two adjacent pixels of the sub-matrix. The pixel matrix furthermore comprises at least one readout stage per sub-matrix, connected to the common detection node.Type: GrantFiled: April 12, 2022Date of Patent: October 24, 2023Assignee: PYXALISInventor: Marie Guillon
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Publication number: 20220337765Abstract: A pixel matrix includes a sub-matrix of four adjacent pixels. Each of the pixels of the sub-matrix comprises: a set of a photoelectric-effect element and a memory point, a detection node, a transfer gate. The binning stage is connected to the set and is common with an adjacent pixel of the sub-matrix. At least one detection node per sub-matrix is common to two adjacent pixels of the sub-matrix. The pixel matrix furthermore comprises at least one readout stage per sub-matrix, connected to the common detection node.Type: ApplicationFiled: April 12, 2022Publication date: October 20, 2022Inventor: Marie GUILLON
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Patent number: 10613202Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: GrantFiled: November 19, 2018Date of Patent: April 7, 2020Assignee: STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Boris Rodrigues Goncalves, Marie Guillon, Yvon Cazaux, Benoit Giffard
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Patent number: 10488499Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.Type: GrantFiled: December 22, 2016Date of Patent: November 26, 2019Assignees: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Francois Roy, Marie Guillon, Yvon Cazaux, Boris Rodrigues, Alexis Rochas
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Patent number: 10468440Abstract: The invention concerns a pixel of an image array comprising one or more charge storage structures (200), each charge storage structure comprising: a first charge storage trench (202) doped to have a first conductivity type and having a first end (208) configured to receive charge accumulated by a photodiode; a second charge storage trench (204) doped to have the first conductivity type; and a first transfer gate (212) linking a second end (214) of the first charge storage trench (202) and the second charge storage trench (202, 204) to a sense node (216), wherein the first and second charge storage trenches are linked together by a linking channel (206) doped to have the first conductivity type and bordering a portion of an edge of the transfer gate (212).Type: GrantFiled: April 23, 2018Date of Patent: November 5, 2019Assignee: Commissariat à l'Energie Atomique et aux Energies AlternativesInventors: Olivier Saxod, Marie Guillon
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Publication number: 20190086519Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: ApplicationFiled: November 19, 2018Publication date: March 21, 2019Applicant: STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Boris Rodrigues Goncalves, Marie Guillon, Yvon Cazaux, Benoit Giffard
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Patent number: 10170513Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.Type: GrantFiled: September 23, 2017Date of Patent: January 1, 2019Assignees: Commissariat à l'Energie Atomique et aux Energies, STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS (GRENOBLE 2) SASInventors: Yvon Cazaux, François Roy, Marie Guillon, Arnaud Laflaquiere
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Patent number: 10162048Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: GrantFiled: December 28, 2016Date of Patent: December 25, 2018Assignee: STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Boris Rodrigues, Marie Guillon, Yvon Cazaux, Benoit Giffard
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Publication number: 20180315784Abstract: The invention concerns a pixel of an image array comprising one or more charge storage structures (200), each charge storage structure comprising: a first charge storage trench (202) doped to have a first conductivity type and having a first end (208) configured to receive charge accumulated by a photodiode; a second charge storage trench (204) doped to have the first conductivity type; and a first transfer gate (212) linking a second end (214) of the first charge storage trench (202) and the second charge storage trench (202, 204) to a sense node (216), wherein the first and second charge storage trenches are linked together by a linking channel (206) doped to have the first conductivity type and bordering a portion of an edge of the transfer gate (212).Type: ApplicationFiled: April 23, 2018Publication date: November 1, 2018Inventors: Olivier SAXOD, Marie GUILLON
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Patent number: 9917124Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.Type: GrantFiled: October 22, 2015Date of Patent: March 13, 2018Assignee: Commissariat à l'Energie Atomique et aux Energies AlternativesInventors: Yvon Cazaux, François Roy, Arnaud Laflaquiere, Marie Guillon
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Publication number: 20180012925Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.Type: ApplicationFiled: September 23, 2017Publication date: January 11, 2018Inventors: Yvon CAZAUX, François ROY, Marie GUILLON, Arnaud LAFLAQUIERE
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Patent number: 9736411Abstract: The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit (120) adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (112); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (112), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.Type: GrantFiled: October 20, 2015Date of Patent: August 15, 2017Assignee: Commissariat à l'Eneragie Atomique et aux Energies AlternativesInventors: Marie Guillon, Yvon Cazaux, Josep Segura Puchades
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Publication number: 20170192090Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.Type: ApplicationFiled: December 22, 2016Publication date: July 6, 2017Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Francois Roy, Marie Guillon, Yvon Cazaux, Boris Rodrigues, Alexis Rochas
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Publication number: 20170194368Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: ApplicationFiled: December 28, 2016Publication date: July 6, 2017Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Francois Roy, Boris Rodrigues, Marie Guillon, Yvon Cazaux, Benoit Giffard
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Patent number: 9531974Abstract: The invention relates to image sensors of scanner type observing one image line at a time. According to the invention, only two lines of pixels are used, operating in TDI mode (summation of the charge of two pixels seeing the same image point successively) but using active pixels with a charge-voltage conversion within the pixel. The pixels of like rank of the two lines each use a photodiode and a charge storage node with a transfer gate adjacent to the photodiode and to the storage node for transferring the charge accumulated in the photodiode to the charge storage node. The storage node is shared between the two pixels of like rank, and the charge of the two photodiodes is transferred successively into this node before the reading of the potential taken by the node. The time interval which separates the two charge transfers corresponds substantially to the time which separates the transit of an image line past the first line of pixels and then past the second.Type: GrantFiled: February 10, 2012Date of Patent: December 27, 2016Assignee: E2V SEMICONDUCTORSInventors: Marie Guillon, Thierry Ligozat
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Publication number: 20160118432Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.Type: ApplicationFiled: October 22, 2015Publication date: April 28, 2016Inventors: Yvon CAZAUX, François ROY, Arnaud LAFLAQUIERE, Marie GUILLON
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Publication number: 20160112662Abstract: The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit (120) adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (112); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (112), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.Type: ApplicationFiled: October 20, 2015Publication date: April 21, 2016Inventors: Marie GUILLON, Yvon CAZAUX, Josep SEGURA PUCHADES
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Patent number: 9185319Abstract: The invention relates to matrix image sensors organized into pixel rows and columns, and more specifically to image sensors produced with active pixels in MOS technology. The matrix is organized into groups of at least two pixels with means for grouping the charges engendered in the two pixels into one pixel, with the aim of improving sensitivity. Provision is made for at least one gate for temporarily storing charges, of dissymmetric form, arranged between the photodiode of the first pixel and the photodiode of the second pixel, and means for applying to the temporary storage gate a succession of potentials that allow prohibition first of all of the passage of charges between the first and second photodiodes during the charge integration period, then collection, under the gate, of the charges accumulated in the photodiodes, then discharge of these charges only into the second photodiode, on account of the dissymmetry of the gate. The charges grouped in this way in a single photodiode are read in the pixel.Type: GrantFiled: July 25, 2012Date of Patent: November 10, 2015Assignee: E2V SEMICONDUCTORSInventors: Frédéric Mayer, Marie Guillon
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Publication number: 20140218580Abstract: The invention relates to matrix image sensors organized into pixel rows and columns, and more specifically to image sensors produced with active pixels in MOS technology. The matrix is organized into groups of at least two pixels with means for grouping the charges engendered in the two pixels into one pixel, with the aim of improving sensitivity. Provision is made for at least one gate for temporarily storing charges, of dissymmetric form, arranged between the photodiode of the first pixel and the photodiode of the second pixel, and means for applying to the temporary storage gate a succession of potentials that allow prohibition first of all of the passage of charges between the first and second photodiodes during the charge integration period, then collection, under the gate, of the charges accumulated in the photodiodes, then discharge of these charges only into the second photodiode, on account of the dissymmetry of the gate. The charges grouped in this way in a single photodiode are read in the pixel.Type: ApplicationFiled: July 25, 2012Publication date: August 7, 2014Applicant: E2V SemiconductorsInventors: Frédéric Mayer, Marie Guillon
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Publication number: 20130314572Abstract: The invention relates to image sensors of scanner type observing one image line at a time. According to the invention, only two lines of pixels are used, operating in TDI mode (summation of the charge of two pixels seeing the same image point successively) but using active pixels with a charge-voltage conversion within the pixel. The pixels of like rank of the two lines each use a photodiode and a charge storage node with a transfer gate adjacent to the photodiode and to the storage node for transferring the charge accumulated in the photodiode to the charge storage node. The storage node is shared between the two pixels of like rank, and the charge of the two photodiodes is transferred successively into this node before the reading of the potential taken by the node. The time interval which separates the two charge transfers corresponds substantially to the time which separates the transit of an image line past the first line of pixels and then past the second.Type: ApplicationFiled: February 10, 2012Publication date: November 28, 2013Applicant: E2V SemiconductorsInventors: Marie Guillon, Thierry Ligozat