Abstract: A method of wet cleaning a surface is disclosed. The method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, includes the following successive steps: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried.

Abstract: Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried. Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

Abstract: Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried. Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

Abstract: A process makes at least one nanotube between two electrically conducting elements located on a substrate, using, inside a deposition chamber, a microwave power, a magnetic field, and at least one electronic cyclotron resonance zone faciliting ionization and/or dissociation of a gas containing carbon injected into the deposition chamber at a low pressure inside the deposition chamber, causing ionization and/or dissociation of this gas in each electronic cyclotron resonance zone. The ions and electrons produced are located along the field lines of the magnetic field set up in the deposition chamber. The process also includes a screening operation of the various species produced in each electronic cyclotron resonance zone to enable exclusive access of CxHy°non condensable free radicals produced to access a deposition zone adjacent to at least one part of the substrate including the two electrically conducting elements to make the nanotube.

Abstract: The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD). Said method comprises the following steps: a step of forming on the substrate (12) stable nuclei (14) of a first semi-conductor material in the form of islands, by CVD from a precursor (11) of the first semi-conductor material chosen so that the dielectric material (12) accepts the formation of said nuclei (14), a step of forming nanostructures (16A, 16B) of a second semi-conductor material from the stable nuclei (14) of the first semi-conductor material, by CVD from a precursor (21) chosen to generate a selective deposition of the second semi-conductor material only on said nuclei (14). The invention further concerns nanostructures formed according to one of said methods as well as devices comprising said nanostructures.

Abstract: Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried. Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

Abstract: Process and device for depositing, by electron cyclotron resonance plasma, a web of carbon nanofibres or nanotubes, on a substrate without a catalyst, by injection of a microwave power into a deposition chamber including a magnetic structure with a highly unbalanced magnetic mirror and at least one electron cyclotron resonance zone within the interior of the deposition chamber itself and opposite the substrate. Under a pressure of less than 10−4 mbar, ionization and/or dissociation of a gas containing carbon is induced in the magnetic mirror in the center of the deposition chamber, thus producing species that deposit on the substrate, which is heated.

Abstract: The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD).

Abstract: The invention relates to a device comprising microstructures or nanostructures on a support, characterized in that the support comprises: a) a substrate (1) comprising at least one part composed of a crystalline material, this part having a surface (2) with a stress field or a topology associated with a stress field, the stress field being associated with dislocations, b) an intermediate layer (3) bonded to the surface (2), and having a thickness and/or composition and/or a surface state enabling transmission of said stress field through this layer as far as its free face that supports microstructures or nanostructures (4).

Abstract: This invention relates to a process for making at least one nanotube (2) between two electrically conducting elements (4) located on a substrate (8), the said process using microwave power in a deposition chamber (6), a gas containing organic molecules injected at low pressure inside the deposition chamber (6). According to the invention, the process also uses a magnetic field and at least one electronic cyclotron resonance zone (16) facilitating ionization and/or dissociation of the injected gas, the process also comprising a screening operation of the various species produced in each electronic cyclotron resonance zone (16), in order to exclusively enable CxHyo type non condensable free radicals to access the deposition zone (24) to make the said nanotube.

Abstract: The present invention relates to a process for electron cyclotron resonance plasma deposition of electron-emitting carbon films, in which by injecting a microwave power into a plasma chamber incorporating an electron cyclotron resonance zone (9), ionization takes place of a gaseous mixture under a low pressure, the thus created ions and electrons diffusing along the magnetic field lines (6) to a substrate (3), the gaseous mixture comprising organic molecules and hydrogen molecules. Said process comprises the following stages: heating the substrate (3), creating a plasma from the ionized gaseous mixture, creating a potential difference between the plasma and the substrate, diffusion of the plasma up to the substrate (3) which, by heating, has reached a temperature such that said electron-emitting material is deposited on the substrate.

Abstract: A display screen which does not have moire effects. The transparency of an intermediate subassembly, through which the observation is made, is substantially constant at the scale of an anode subassembly. The patterns of the intermediate subassemblies have a sufficiently low periodicity in at least one direction. This may be used in the production of display screens with micropoints.

Abstract: A display screen which includes a microtip electron source which is observerable through the microtip support. The screen includes a cathodoluminescent anode, transparent support and cathode conductors formed on the support. The conductors are meshed according to a first pattern which includes openings. A resistive layer formed on the support is meshed according to a second pattern and includes solid areas located in the openings of the first pattern. Microtips are formed on the solid areas. Grids are meshed according to the second pattern in an unmeshed insulating layer which is transparent and extends above the cathode conductors and the resistive layer in between them and the grids.