Patents by Inventor Marie-Thérèse Delaye

Marie-Thérèse Delaye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7700457
    Abstract: The invention concerns a sealing zone between two microstructure substrates. Said sealing zone comprises at least the following parts: on a first wafer level (20), a lower edging (22A) made of an adhesive material capable of causing the first substrate (20) to adhere to a sealing material, said sealing material being adapted to spontaneously diffuse jointly with the material of the second wafer level (30); on said lower edging (22A), a layer of said sealing material; and on said layer of sealing material, a protuberance (36) formed on said second wafer level (30) containing a certain amount of sealing material. The invention is applicable to microstructures comprising vacuum-operated components.
    Type: Grant
    Filed: December 17, 2002
    Date of Patent: April 20, 2010
    Assignee: Commissariat a L'Energie Atomique
    Inventors: Bernard Diem, Stephane Caplet, Marie-Thérèse Delaye
  • Patent number: 6546623
    Abstract: A process for manufacturing a structure equipped with at least one electrical contact, including forming on a substrate a first layer, forming on a front side of the first layer the structure equipped with at least one electrical contact, forming at least one hole though the substrate revealing a rear side of the first layer, and forming an electrical contact to the rear side in a cavity overhung by an edge of the at least one hole closest to the first layer, the edge allowing for electrical insulation of the electrical contact from the substrate.
    Type: Grant
    Filed: March 13, 2002
    Date of Patent: April 15, 2003
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Stéphane Caplet, Marie-Thérèse Delaye
  • Patent number: 6435033
    Abstract: A process for manufacturing a microsystem for a pressure sensor includes the steps of deposit and forming a first conducting layer on a support. Deposit and forming a layer of sacrificial material covering the first conducting layer. Deposit and forming a second conducting layer on the layer of sacrificial material in the region located above the first conducting layer. Forming a first membrane layer covering and surrounding the layer of sacrificial material and the second conducting layer. Eliminating the layer of sacrificial material and forming the first membrane layer.
    Type: Grant
    Filed: March 22, 2001
    Date of Patent: August 20, 2002
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Marie-Thérèse Delaye
  • Patent number: 6431005
    Abstract: A pressure sensor cell has a substrate including at least a first electrode and a deformable membrane. The membrane is fixed by its peripheral edge to the substrate and is spaced from the substrate to define a closed chamber around at least a part of the first electrode. A second electrode is provided formed on a wall of the membrane. The second electrode faces the first electrode and is kept separate from the first electrode if no pressure is exerted on the membrane. Finally, an electronic circuit is placed in the substrate under the first electrode.
    Type: Grant
    Filed: April 15, 1998
    Date of Patent: August 13, 2002
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Marie-Thérèse Delaye
  • Patent number: 6392158
    Abstract: A stack including a micro-system having an electrical contact to connect the micro-system to the outside world, a substrate having a first layer formed on the substrate, a through hole extending in an axial direction of the substrate and configured to reveal a rear side of the first layer and to provide a passage to electrically connect to the electrical contact, and a cavity located at an end of the through hole close to the first layer, wherein the cavity has dimensions transverse to the axial direction larger than a diameter of the through hole and forms an overhanging edge around the through hole.
    Type: Grant
    Filed: August 8, 2000
    Date of Patent: May 21, 2002
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Stéphane Caplet, Marie-Thérèse Delaye