Abstract: The invention concerns a sealing zone between two microstructure substrates. Said sealing zone comprises at least the following parts: on a first wafer level (20), a lower edging (22A) made of an adhesive material capable of causing the first substrate (20) to adhere to a sealing material, said sealing material being adapted to spontaneously diffuse jointly with the material of the second wafer level (30); on said lower edging (22A), a layer of said sealing material; and on said layer of sealing material, a protuberance (36) formed on said second wafer level (30) containing a certain amount of sealing material. The invention is applicable to microstructures comprising vacuum-operated components.

Abstract: Structure equipped with electrical contacts formed through the substrate of this structure and the process for obtaining such a structure.

Abstract: Pressure sensor cell comprising:

Abstract: An integrated pressure sensitive transducer incorporating a pressure sensitive structure having a silicon substrate, and at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate. The diaphragm, which is joined to the substrate at its periphery by means of an etched insulating layer, has a centered insulating stud which bears on the substrate in order to increase the rigidity of the diaphragm. Completing the transducer and for measuring the deformation of the diaphragm is at least one first electrode located in the substrate facing a high deformation region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one second electrode facing at least one low deformation region of the diaphragm and in the vicinity of the periphery and/or the insulating stud.

Abstract: A process for the micromechanical fabrication of nozzles for ink jets includes forming a groove on a surface of a first substrate, securing the first substrate to a second substrate to form an assembly in which the second substrate covers the groove to form a channel having walls, and then forming an internal protective coating within the channel by thermal oxidation of the walls of the channel. The first and second substrates are then cut along a plane extending perpendicular to the channel thereby to form a nozzle for dispensing a liquid jet. Scales, formed as a result of the cutting operations, are formed on the internal protective coating rather than directly on the walls of the channel. These scales then are removed from the nozzle by eliminating the internal protective coating.

Abstract: Process for the production of accelerometers using the silicon on insulator method. The process comprises the following stages: a) producing a conductive monocrystalline silicon film on a silicon substrate and separated from the latter by an insulating layer; b) etching the silicon film and the insulating layer up to the substrate in order to fix the shape of the mobile elements and the measuring device; c) producing electric contacts for the measuring devices; d) partial elimination of the insulating layer in order to free the mobile elements, the remainder of the insulating layer rendering integral the substrate and the moving elements.

Abstract: A process for the production of accelerometers using the silicon on insulator method. The process comprises the following stages: a) producing a conductive monocrystalline silicon film on a silicon substrate and separated from the latter by an insulating layer; b) etching the silicon film and the insulating layer up to the substrate in order to fix the shape of the mobile elements and the measuring devices; c) producing electric contacts for the measuring devices; d) partial elimination of the insulating layer in order to free the mobile elements, the remainder of the insulating layer rendering integral the substrate and the moving elements.

Abstract: A process for producing a pressure transducer or sensor using the silicon-on-insulator method is provided. The process includes the following steps: (a) producing a monocrystalline silicon film (44) on a silicon substrate (6) at least locally separated from the latter by an insulating layer (42), (b) producing an opening (24) in the silicon film down to the insulating layer, (c) partially eliminating the insulating layer via the opening in order to form the diaphragm in the silicon film, and (d) resealing the opening (26).

Abstract: Magnetic bubble memory in hybrid technology using rows of chevron patterns. The memory detection system has an active detection zone (4) constituted by rows of chevrons, in order to stretch into the form of a strip the bubbles from a propagation path (2), and a first detector (8); a bubble elimination zone (12) constituted by forcing back means (18) for stopping the advance of the bubbles and for forcing them outside the detection system; and a passive detection zone (6) located following the bubble elimination zone (12) and incorporating a second detector (9), to which no bubble must be exposed, in order to eliminate the unwanted signal due to the influence of a rotary magnetic field necessary for the propagation of the bubbles. According to the invention, elimination zone (12) is provided with at least one barrier (20) produced by ion implantation in order to block the passage of the bubbles from active zone (4) to passive zone (6).

Abstract: A bubble memory with a hybrid junction formed between a first propagation track defined by a boundary between an implanted area and a non-implanted area and a second propagation track defined by a sequence of deposited patterns. The overlap zone between the tracks has a surface substantially equal in size to the magnetic bubble. The boundary cleared by the magnetic bubble has a direction perpendicular to an easy magnetization axis of the magnetic material of the memory, and an implanted area is formed beneath one leg of the deposited pattern.